Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

C. H. Liu, H. W. Chen

Research output: Contribution to journalArticle

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Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposition (ALD) HfZrLaO high-κ gate dielectric were fabricated and investigated. The equivalent oxide thickness (EOT) is 0.68 nm and the gate leakage current density (Jg) is only 9.3 × 10-1 A/cm2. The time-dependence dielectric breakdown (TDDB) behavior agrees with the percolation model, and the TDDB characteristics are consistent with the thermochemical E-model for lifetime projection. The experimental results show that the Weibull slopes are almost independent of capacitor area and stress conditions. The field acceleration parameter (γ) and activation energy (ΔH0) are determined around 5.9-7.0 cm/MV and 0.54-0.60 eV, respectively. At 85 °C, the maximum voltage projected for 10-years TDDB lifetime is 1.87 V.

Original languageEnglish
Pages (from-to)599-602
Number of pages4
JournalMicroelectronics Reliability
Issue number5
Publication statusPublished - 2010 May 1


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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