Electrical and structural study on indium zinc oxide thin films by sputtering process

Chuan Li, J. H. Hsieh, S. J. Liu, W. S. Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

One disadvantage of currently available indium-zinc oxides (IZOs) is the high content of indium. This high composition of In is costly and difficult for massive production, which is crucially required for solar energy and display applications. IZOs already demonstrated higher optical transmittance (>75%) than that of aluminum zinc oxides (AZO); better resistance to water vapor than zinc oxides (ZnO); and relatively good electrical conductivity. Therefore, improvements of IZOs could be worthy of attention. In this study, relatively low indium IZO thin films were deposited on glass substrates using magnetron sputtering with a mixed 53wt.% In2O3+47wt.% ZnO target. To monitor the process, both Langmuir probe and optical emission spectrometer were employed to investigate the plasma conditions. Several parameters such as plasma potential, electron and ion densities were carefully recorded and analyzed. On the other hand, the structure and electrical resistivity of films were examined by XRD and four-point probe. The correlations between the process parameters (Ar flow rate) and films' properties were assessed based upon results from the plasma diagnostics.

Original languageEnglish
Pages (from-to)471-477
Number of pages7
JournalSurface and Coatings Technology
Volume231
DOIs
Publication statusPublished - 2013 Sep 25

Fingerprint

Zinc Oxide
Indium
Zinc oxide
zinc oxides
indium oxides
Oxide films
Sputtering
sputtering
Thin films
thin films
electrical resistivity
indium
Plasmas
Plasma diagnostics
Langmuir probes
plasma potentials
plasma diagnostics
Steam
Opacity
solar energy

Keywords

  • IZO thin film
  • Langmuir probe
  • Optical emission spectrum
  • Plasma diagnostics

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Electrical and structural study on indium zinc oxide thin films by sputtering process. / Li, Chuan; Hsieh, J. H.; Liu, S. J.; Lin, W. S.

In: Surface and Coatings Technology, Vol. 231, 25.09.2013, p. 471-477.

Research output: Contribution to journalArticle

@article{d1ca2811bab148ef99402afb3f5378d0,
title = "Electrical and structural study on indium zinc oxide thin films by sputtering process",
abstract = "One disadvantage of currently available indium-zinc oxides (IZOs) is the high content of indium. This high composition of In is costly and difficult for massive production, which is crucially required for solar energy and display applications. IZOs already demonstrated higher optical transmittance (>75{\%}) than that of aluminum zinc oxides (AZO); better resistance to water vapor than zinc oxides (ZnO); and relatively good electrical conductivity. Therefore, improvements of IZOs could be worthy of attention. In this study, relatively low indium IZO thin films were deposited on glass substrates using magnetron sputtering with a mixed 53wt.{\%} In2O3+47wt.{\%} ZnO target. To monitor the process, both Langmuir probe and optical emission spectrometer were employed to investigate the plasma conditions. Several parameters such as plasma potential, electron and ion densities were carefully recorded and analyzed. On the other hand, the structure and electrical resistivity of films were examined by XRD and four-point probe. The correlations between the process parameters (Ar flow rate) and films' properties were assessed based upon results from the plasma diagnostics.",
keywords = "IZO thin film, Langmuir probe, Optical emission spectrum, Plasma diagnostics",
author = "Chuan Li and Hsieh, {J. H.} and Liu, {S. J.} and Lin, {W. S.}",
year = "2013",
month = "9",
day = "25",
doi = "10.1016/j.surfcoat.2012.04.084",
language = "English",
volume = "231",
pages = "471--477",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

TY - JOUR

T1 - Electrical and structural study on indium zinc oxide thin films by sputtering process

AU - Li, Chuan

AU - Hsieh, J. H.

AU - Liu, S. J.

AU - Lin, W. S.

PY - 2013/9/25

Y1 - 2013/9/25

N2 - One disadvantage of currently available indium-zinc oxides (IZOs) is the high content of indium. This high composition of In is costly and difficult for massive production, which is crucially required for solar energy and display applications. IZOs already demonstrated higher optical transmittance (>75%) than that of aluminum zinc oxides (AZO); better resistance to water vapor than zinc oxides (ZnO); and relatively good electrical conductivity. Therefore, improvements of IZOs could be worthy of attention. In this study, relatively low indium IZO thin films were deposited on glass substrates using magnetron sputtering with a mixed 53wt.% In2O3+47wt.% ZnO target. To monitor the process, both Langmuir probe and optical emission spectrometer were employed to investigate the plasma conditions. Several parameters such as plasma potential, electron and ion densities were carefully recorded and analyzed. On the other hand, the structure and electrical resistivity of films were examined by XRD and four-point probe. The correlations between the process parameters (Ar flow rate) and films' properties were assessed based upon results from the plasma diagnostics.

AB - One disadvantage of currently available indium-zinc oxides (IZOs) is the high content of indium. This high composition of In is costly and difficult for massive production, which is crucially required for solar energy and display applications. IZOs already demonstrated higher optical transmittance (>75%) than that of aluminum zinc oxides (AZO); better resistance to water vapor than zinc oxides (ZnO); and relatively good electrical conductivity. Therefore, improvements of IZOs could be worthy of attention. In this study, relatively low indium IZO thin films were deposited on glass substrates using magnetron sputtering with a mixed 53wt.% In2O3+47wt.% ZnO target. To monitor the process, both Langmuir probe and optical emission spectrometer were employed to investigate the plasma conditions. Several parameters such as plasma potential, electron and ion densities were carefully recorded and analyzed. On the other hand, the structure and electrical resistivity of films were examined by XRD and four-point probe. The correlations between the process parameters (Ar flow rate) and films' properties were assessed based upon results from the plasma diagnostics.

KW - IZO thin film

KW - Langmuir probe

KW - Optical emission spectrum

KW - Plasma diagnostics

UR - http://www.scopus.com/inward/record.url?scp=84882821387&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882821387&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2012.04.084

DO - 10.1016/j.surfcoat.2012.04.084

M3 - Article

AN - SCOPUS:84882821387

VL - 231

SP - 471

EP - 477

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -