Electrical and reliability characteristics in strained-Si mOSFETs

Chia Cheng Yang, Tung Ming Pan, Kai Ming Chen, Chuan Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64% for electrons and 45% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45% compared to 4.5% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages271-277
Number of pages7
Edition2
DOIs
Publication statusPublished - 2008 Nov 17
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Country/TerritoryUnited States
CityPhoenix, AZ
Period2008/05/182008/05/22

ASJC Scopus subject areas

  • Engineering(all)

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