Electrical and reliability characteristics in strained-Si mOSFETs

Chia Cheng Yang, Tung Ming Pan, Kai Ming Chen, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64% for electrons and 45% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45% compared to 4.5% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages271-277
Number of pages7
Edition2
DOIs
Publication statusPublished - 2008 Nov 17
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

Fingerprint

Hot carriers
Drain current
Carrier mobility
Surface roughness
Scattering
Electrons
Substrates
Negative bias temperature instability

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yang, C. C., Pan, T. M., Chen, K. M., & Liu, C-H. (2008). Electrical and reliability characteristics in strained-Si mOSFETs. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 271-277). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908640

Electrical and reliability characteristics in strained-Si mOSFETs. / Yang, Chia Cheng; Pan, Tung Ming; Chen, Kai Ming; Liu, Chuan-Hsi.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. p. 271-277 (ECS Transactions; Vol. 13, No. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, CC, Pan, TM, Chen, KM & Liu, C-H 2008, Electrical and reliability characteristics in strained-Si mOSFETs. in ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 13, pp. 271-277, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2908640
Yang CC, Pan TM, Chen KM, Liu C-H. Electrical and reliability characteristics in strained-Si mOSFETs. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 ed. 2008. p. 271-277. (ECS Transactions; 2). https://doi.org/10.1149/1.2908640
Yang, Chia Cheng ; Pan, Tung Ming ; Chen, Kai Ming ; Liu, Chuan-Hsi. / Electrical and reliability characteristics in strained-Si mOSFETs. ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. pp. 271-277 (ECS Transactions; 2).
@inproceedings{8a11951cb7e942cd8aa60c66fc3b5e36,
title = "Electrical and reliability characteristics in strained-Si mOSFETs",
abstract = "In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64{\%} for electrons and 45{\%} for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45{\%} compared to 4.5{\%} in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.",
author = "Yang, {Chia Cheng} and Pan, {Tung Ming} and Chen, {Kai Ming} and Chuan-Hsi Liu",
year = "2008",
month = "11",
day = "17",
doi = "10.1149/1.2908640",
language = "English",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "271--277",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",

}

TY - GEN

T1 - Electrical and reliability characteristics in strained-Si mOSFETs

AU - Yang, Chia Cheng

AU - Pan, Tung Ming

AU - Chen, Kai Ming

AU - Liu, Chuan-Hsi

PY - 2008/11/17

Y1 - 2008/11/17

N2 - In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64% for electrons and 45% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45% compared to 4.5% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.

AB - In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64% for electrons and 45% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45% compared to 4.5% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.

UR - http://www.scopus.com/inward/record.url?scp=55849108864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55849108864&partnerID=8YFLogxK

U2 - 10.1149/1.2908640

DO - 10.1149/1.2908640

M3 - Conference contribution

AN - SCOPUS:55849108864

SN - 9781566776271

T3 - ECS Transactions

SP - 271

EP - 277

BT - ECS Transactions - Dielectrics for Nanosystems 3

ER -