Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures

Hemanth Kumar Bangolla, Muhammad Yusuf Fakhri, Ching Hsuan Lin, Cheng Maw Cheng, Yi Hung Lu, Tsu Yi Fu, Pushpa Selvarasu, Rajesh Kumar Ulaganathan, Raman Sankar, Ruei San Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Two interesting electronic transport properties including in-plane anisotropy and nonhomogeneous carrier distribution were observed in ReS2 nanoflakes. The electrical conductivity defined by the current parallel to the b-axis (‖b) is 32 times higher than that perpendicular to the b-axis (⊥b). Similar anisotropy was also observed in optoelectronic properties in which the ratio of responsivity ‖b to ⊥b reaches 20. In addition, conductivity and thermal activation energy with substantial thickness dependence were observed, which indicates a surface-dominant 2D transport in ReS2 nanoflakes. The presence of surface electron accumulation (SEA) in ReS2 has been confirmed by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy. The electron concentration (∼1019 cm−3) at the surface is over three orders of magnitude higher than that of the bulks. Sulfur vacancies which are sensitive to air molecules are suggested to be the major factor resulting in SEA and high conductivity in ReS2 nanostructures.

Original languageEnglish
Pages (from-to)19735-19745
Number of pages11
Issue number48
Publication statusPublished - 2023 Nov 15

ASJC Scopus subject areas

  • General Materials Science


Dive into the research topics of 'Electrical and optoelectronic anisotropy and surface electron accumulation in ReS2 nanostructures'. Together they form a unique fingerprint.

Cite this