Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu, T. C. Chen, M. H. Lee, S. H. Huang, L. S. Lee, C. W. Liu

    Research output: Contribution to conferencePaperpeer-review

    1 Citation (Scopus)

    Abstract

    Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

    Original languageEnglish
    Pages165-168
    Number of pages4
    Publication statusPublished - 2004 Dec 1
    EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
    Duration: 2004 Jul 52004 Jul 8

    Other

    OtherProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    CountryTaiwan
    Period04/7/504/7/8

    ASJC Scopus subject areas

    • Engineering(all)

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