Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu, T. C. Chen, M. H. Lee, S. H. Huang, L. S. Lee, C. W. Liu

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

Original languageEnglish
Pages165-168
Number of pages4
Publication statusPublished - 2004 Dec 1
EventProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
Duration: 2004 Jul 52004 Jul 8

Other

OtherProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
CountryTaiwan
Period04/7/504/7/8

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yu, C. Y., Chen, T. C., Lee, M. H., Huang, S. H., Lee, L. S., & Liu, C. W. (2004). Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation. 165-168. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.