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Electric field geometries dominate quantum transport coupling in silicon nanoring
Tsung Han Lee
*
,
Shu Fen Hu
*
Corresponding author for this work
Department of Physics
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transport
100%
geometry
100%
coupling
100%
silicon
100%
electric fields
100%
oscillations
50%
doped materials
50%
aharonov-bohm effect
50%
investigations
25%
rings
25%
quantum dots
25%
voltage
25%
electrons
25%
magnetic fields
25%
nanowires
25%
interference
25%
modulation
25%
periodicity
25%
electron beams
25%
confinement
25%
arsenic
25%
Chemistry
Electric Field
100%
Silicon
100%
Quantum Transport
100%
Coulomb Blockade
50%
Oscillation
50%
Quantum Dot
25%
Nanowire
25%
Electron Particle
25%
Voltage
25%
Magnetic Field
25%
Arsenic
25%
Interference
25%
Electron Beam
25%
Chemical Engineering
Silicon
100%
Quantum Dot
25%
Nanowires
25%
Lithography
25%
Material Science
Nanowire
25%
Electron Optical Lithography
25%
Nanodevice
25%
Engineering
Ring Radius
25%