Electric field geometries dominate quantum transport coupling in silicon nanoring

Tsung Han Lee*, Shu Fen Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov-Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ΔB=0.178T was estimated for a ring radius of 86nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

Original languageEnglish
Article number123712
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2014 Mar 28

ASJC Scopus subject areas

  • General Physics and Astronomy


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