Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

J. M. Hwang*, W. H. Hung, H. L. Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

Original languageEnglish
Pages (from-to)608-610
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
Publication statusPublished - 2008 Apr 15


  • Light-emitting diode (LED)
  • Photoelectrochemical (PEC) etching
  • Surface roughening

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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