Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

J. M. Hwang, Wei-Hsiu Hung, H. L. Hwang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

Original languageEnglish
Pages (from-to)608-610
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number8
DOIs
Publication statusPublished - 2008 Apr 15

Keywords

  • Light-emitting diode (LED)
  • Photoelectrochemical (PEC) etching
  • Surface roughening

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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