Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

  • P. C. Juan*
  • , C. L. Sun
  • , C. H. Liu
  • , C. L. Lin
  • , F. C. Mong
  • , J. H. Huang
  • , H. S. Chang
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

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Material Science