Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. C. Juan*, C. L. Sun, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang, H. S. Chang

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories'. Together they form a unique fingerprint.

INIS

Material Science

Physics