Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories
- P. C. Juan*
- , C. L. Sun
- , C. H. Liu
- , C. L. Lin
- , F. C. Mong
- , J. H. Huang
- , H. S. Chang
*Corresponding author for this work
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