Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. C. Juan, C. L. Sun, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang, H. S. Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)


Metal-ferroelectric (Zr-doped BiFeO3)-insulator (HfO 2)-semiconductor (MFIS) structures have been fabricated by magnetron cosputtering technique. The C-V memory windows of MFIS capacitors as functions of insulator film thickness, DC power for Zr, post-annealing temperature were compared. The leakage current that reduces with increasing the DC power results in larger memory window. The memory window increases with increasing HfO 2 insulator thickness due to the effect of charge injection. In addition, the memory window increases with increasing DC power for Zr. A maximum memory window of 1.6 V is obtained at the swept voltage of 8 V. The temperature-dependent conduction currents of MFIS capacitors with Zr-doped BFO thin films were studied.

Original languageEnglish
Pages (from-to)142-147
Number of pages6
JournalMicroelectronic Engineering
Publication statusPublished - 2013 May 1



  • Conduction mechanism
  • Depth profile
  • Memory window
  • X-ray photoelectron spectroscopy
  • Zr-doped BiFeO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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