Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu; Cheng Fu Yang; Yuan Tai Hsieh; Wen Ray Chen; Chin Guo Kuo; Hong Hsin Huang

doi:10.1016/j.ceramint.2011.06.055

Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO₂ thin films

Chia Ching Wu, Cheng Fu Yang^*, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

^*Corresponding author for this work

Department of Industrial Education

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

TiO₂ thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO₂ bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO₂ and W-TiO ₂ bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO₂ phases were observed in the TiO₂ and W-TiO₂ bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO₂ thin films. The W-TiO₂ bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO₂ and the non-annealed and annealed W-TiO₂ bi-layer thin films were evaluated using (αhν)^1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO₂ bi-layer thin films.

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Ceramics International
Volume	38
Issue number	1
DOIs	https://doi.org/10.1016/j.ceramint.2011.06.055
Publication status	Published - 2012 Jan

Keywords

A. Films
C. Electrical properties
C. Ferroelectric properties
D. TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2011.06.055

Cite this

@article{c9ac88b8d8a2428d9ac21c069754c0da,

title = "Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films",

abstract = "TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.",

keywords = "A. Films, C. Electrical properties, C. Ferroelectric properties, D. TiO",

author = "Wu, {Chia Ching} and Yang, {Cheng Fu} and Hsieh, {Yuan Tai} and Chen, {Wen Ray} and Kuo, {Chin Guo} and Huang, {Hong Hsin}",

note = "Funding Information: The authors will acknowledge to the financial support of NSC 99-2221-E-390-013-MY2 and the experimental data coordination of C.Y. Huang.",

year = "2012",

month = jan,

doi = "10.1016/j.ceramint.2011.06.055",

language = "English",

volume = "38",

pages = "223--227",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

AU - Wu, Chia Ching

AU - Yang, Cheng Fu

AU - Hsieh, Yuan Tai

AU - Chen, Wen Ray

AU - Kuo, Chin Guo

AU - Huang, Hong Hsin

N1 - Funding Information: The authors will acknowledge to the financial support of NSC 99-2221-E-390-013-MY2 and the experimental data coordination of C.Y. Huang.

PY - 2012/1

Y1 - 2012/1

N2 - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

AB - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

KW - A. Films

KW - C. Electrical properties

KW - C. Ferroelectric properties

KW - D. TiO

UR - http://www.scopus.com/inward/record.url?scp=82155191272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82155191272&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2011.06.055

DO - 10.1016/j.ceramint.2011.06.055

M3 - Article

AN - SCOPUS:82155191272

SN - 0272-8842

VL - 38

SP - 223

EP - 227

JO - Ceramics International

JF - Ceramics International

IS - 1

ER -