Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu, Cheng Fu Yang, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

Original languageEnglish
Pages (from-to)223-227
Number of pages5
JournalCeramics International
Volume38
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Tungsten
Electric properties
Annealing
Thin films
Temperature
Energy gap
Magnetron sputtering
Titanium dioxide
Crystal structure
Glass

Keywords

  • A. Films
  • C. Electrical properties
  • C. Ferroelectric properties
  • D. TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films. / Wu, Chia Ching; Yang, Cheng Fu; Hsieh, Yuan Tai; Chen, Wen Ray; Kuo, Chin Guo; Huang, Hong Hsin.

In: Ceramics International, Vol. 38, No. 1, 01.01.2012, p. 223-227.

Research output: Contribution to journalArticle

Wu, Chia Ching ; Yang, Cheng Fu ; Hsieh, Yuan Tai ; Chen, Wen Ray ; Kuo, Chin Guo ; Huang, Hong Hsin. / Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films. In: Ceramics International. 2012 ; Vol. 38, No. 1. pp. 223-227.
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AU - Huang, Hong Hsin

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AB - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

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