Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu, Cheng Fu Yang, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

Original languageEnglish
Pages (from-to)223-227
Number of pages5
JournalCeramics International
Issue number1
Publication statusPublished - 2012 Jan


  • A. Films
  • C. Electrical properties
  • C. Ferroelectric properties
  • D. TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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