Effects of thickness on the properties of indium-doped zinc oxide films

Chia Ching Wu; Chien Chen Diao; Chih Chin Yang; Yi Chieh Chao; Chin Guo Kuo; Cheng Fu Yang

doi:10.1007/978-3-319-04573-3_24

Effects of thickness on the properties of indium-doped zinc oxide films

Chia Ching Wu, Chien Chen Diao, Chih Chin Yang, Yi Chieh Chao, Chin Guo Kuo, Cheng Fu Yang^*

^*Corresponding author for this work

Department of Industrial Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10^-3 to 2.85 9 10^-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.

Original language	English
Title of host publication	Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013
Editors	Cheng-Yi Chen, Cheng-Fu Yang, Jengnan Juang
Publisher	Springer Verlag
Pages	187-194
Number of pages	8
ISBN (Electronic)	9783319045726
DOIs	https://doi.org/10.1007/978-3-319-04573-3_24
Publication status	Published - 2014
Event	2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013 - Kaohsiung, Taiwan Duration: 2013 Dec 12 → 2013 Dec 14

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	293
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Other

Other	2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	2013/12/12 → 2013/12/14

Keywords

Indium-doped zinc oxide
RF magnetron sputtering
Thickness
Transparent conductive oxide

ASJC Scopus subject areas

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-3-319-04573-3_24

Cite this

Wu, C. C., Diao, C. C., Yang, C. C., Chao, Y. C., Kuo, C. G., & Yang, C. F. (2014). Effects of thickness on the properties of indium-doped zinc oxide films. In C.-Y. Chen, C.-F. Yang, & J. Juang (Eds.), Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013 (pp. 187-194). (Lecture Notes in Electrical Engineering; Vol. 293). Springer Verlag. https://doi.org/10.1007/978-3-319-04573-3_24

Effects of thickness on the properties of indium-doped zinc oxide films. / Wu, Chia Ching; Diao, Chien Chen; Yang, Chih Chin et al.
Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013. ed. / Cheng-Yi Chen; Cheng-Fu Yang; Jengnan Juang. Springer Verlag, 2014. p. 187-194 (Lecture Notes in Electrical Engineering; Vol. 293).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, CC, Diao, CC, Yang, CC, Chao, YC, Kuo, CG & Yang, CF 2014, Effects of thickness on the properties of indium-doped zinc oxide films. in C-Y Chen, C-F Yang & J Juang (eds), Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013. Lecture Notes in Electrical Engineering, vol. 293, Springer Verlag, pp. 187-194, 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013, Kaohsiung, Taiwan, 2013/12/12. https://doi.org/10.1007/978-3-319-04573-3_24

Wu CC, Diao CC, Yang CC, Chao YC, Kuo CG, Yang CF. Effects of thickness on the properties of indium-doped zinc oxide films. In Chen CY, Yang CF, Juang J, editors, Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013. Springer Verlag. 2014. p. 187-194. (Lecture Notes in Electrical Engineering). doi: 10.1007/978-3-319-04573-3_24

Wu, Chia Ching ; Diao, Chien Chen ; Yang, Chih Chin et al. / Effects of thickness on the properties of indium-doped zinc oxide films. Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013. editor / Cheng-Yi Chen ; Cheng-Fu Yang ; Jengnan Juang. Springer Verlag, 2014. pp. 187-194 (Lecture Notes in Electrical Engineering).

@inproceedings{9df9253c0f794fbd8dddc77abd0c9052,

title = "Effects of thickness on the properties of indium-doped zinc oxide films",

abstract = "In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10-3 to 2.85 9 10-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.",

keywords = "Indium-doped zinc oxide, RF magnetron sputtering, Thickness, Transparent conductive oxide",

author = "Wu, {Chia Ching} and Diao, {Chien Chen} and Yang, {Chih Chin} and Chao, {Yi Chieh} and Kuo, {Chin Guo} and Yang, {Cheng Fu}",

note = "Publisher Copyright: {\textcopyright} Springer International Publishing Switzerland 2014.; 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013 ; Conference date: 12-12-2013 Through 14-12-2013",

year = "2014",

doi = "10.1007/978-3-319-04573-3_24",

language = "English",

series = "Lecture Notes in Electrical Engineering",

publisher = "Springer Verlag",

pages = "187--194",

editor = "Cheng-Yi Chen and Cheng-Fu Yang and Jengnan Juang",

booktitle = "Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013",

}

TY - GEN

T1 - Effects of thickness on the properties of indium-doped zinc oxide films

AU - Wu, Chia Ching

AU - Diao, Chien Chen

AU - Yang, Chih Chin

AU - Chao, Yi Chieh

AU - Kuo, Chin Guo

AU - Yang, Cheng Fu

N1 - Publisher Copyright: © Springer International Publishing Switzerland 2014.

PY - 2014

Y1 - 2014

N2 - In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10-3 to 2.85 9 10-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.

AB - In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10-3 to 2.85 9 10-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.

KW - Indium-doped zinc oxide

KW - RF magnetron sputtering

KW - Thickness

KW - Transparent conductive oxide

UR - http://www.scopus.com/inward/record.url?scp=84928231972&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928231972&partnerID=8YFLogxK

U2 - 10.1007/978-3-319-04573-3_24

DO - 10.1007/978-3-319-04573-3_24

M3 - Conference contribution

AN - SCOPUS:84928231972

T3 - Lecture Notes in Electrical Engineering

SP - 187

EP - 194

BT - Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013

A2 - Chen, Cheng-Yi

A2 - Yang, Cheng-Fu

A2 - Juang, Jengnan

PB - Springer Verlag

T2 - 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013

Y2 - 12 December 2013 through 14 December 2013

ER -

Effects of thickness on the properties of indium-doped zinc oxide films

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