Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD

Chin Guo Kuo; Hong Hsin Huang; Cheng Fu Yang

doi:10.1016/j.ceramint.2011.03.051

Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD

Chin Guo Kuo, Hong Hsin Huang, Cheng Fu Yang^*

^*Corresponding author for this work

Department of Industrial Education

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Yttria-stabilized zirconia, YSZ, thin films were prepared by E-beam physical vapor deposition (PVD) at 200 °C under oxygen pressure of 1 × 10^-3∼1 × 10^-5 Torr. Observations by Field Emission Scanning Electron Microscope (FESEM) proved that different oxygen pressures influenced the thickness of interfacial SiO_x layer formed between the YSZ thin films and Si(100)-substrate. X-ray diffraction (XRD) patterns were used to determine the crystalline structure and calculate the surface grain size of deposited YSZ thin films. XRD patterns also showed that the peaks corresponding to planes (111), (200), (220), and (311) were found and the YSZ thin films revealed the fluorite structure. At lower oxygen pressure (1 × 10^-5∼1 × 10^-4 Torr) YSZ thin films revealed the (111) preferred orientation and at higher oxygen pressure (5 × 10^-4∼1 × 10^-3 Torr) YSZ thin films revealed the (200) preferred orientation. The effects of oxygen pressure on the lattice constants and the internal strains of YSZ thin films were also investigated.

Original language	English
Pages (from-to)	2037-2041
Number of pages	5
Journal	Ceramics International
Volume	37
Issue number	6
DOIs	https://doi.org/10.1016/j.ceramint.2011.03.051
Publication status	Published - 2011 Aug

Keywords

A. Films
B. Interfaces
Yttria-stabilized zirconia

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2011.03.051

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title = "Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD",

abstract = "Yttria-stabilized zirconia, YSZ, thin films were prepared by E-beam physical vapor deposition (PVD) at 200 °C under oxygen pressure of 1 × 10-3∼1 × 10-5 Torr. Observations by Field Emission Scanning Electron Microscope (FESEM) proved that different oxygen pressures influenced the thickness of interfacial SiOx layer formed between the YSZ thin films and Si(100)-substrate. X-ray diffraction (XRD) patterns were used to determine the crystalline structure and calculate the surface grain size of deposited YSZ thin films. XRD patterns also showed that the peaks corresponding to planes (111), (200), (220), and (311) were found and the YSZ thin films revealed the fluorite structure. At lower oxygen pressure (1 × 10-5∼1 × 10-4 Torr) YSZ thin films revealed the (111) preferred orientation and at higher oxygen pressure (5 × 10-4∼1 × 10-3 Torr) YSZ thin films revealed the (200) preferred orientation. The effects of oxygen pressure on the lattice constants and the internal strains of YSZ thin films were also investigated.",

keywords = "A. Films, B. Interfaces, Yttria-stabilized zirconia",

author = "Kuo, {Chin Guo} and Huang, {Hong Hsin} and Yang, {Cheng Fu}",

note = "Funding Information: The authors will acknowledge to the financial support of NSC 98-2221-E-390 -015 and the experimental work of J.T. Zhou and H.P. Huang.",

year = "2011",

month = aug,

doi = "10.1016/j.ceramint.2011.03.051",

language = "English",

volume = "37",

pages = "2037--2041",

journal = "Ceramics International",

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T1 - Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD

AU - Kuo, Chin Guo

AU - Huang, Hong Hsin

AU - Yang, Cheng Fu

N1 - Funding Information: The authors will acknowledge to the financial support of NSC 98-2221-E-390 -015 and the experimental work of J.T. Zhou and H.P. Huang.

PY - 2011/8

Y1 - 2011/8

N2 - Yttria-stabilized zirconia, YSZ, thin films were prepared by E-beam physical vapor deposition (PVD) at 200 °C under oxygen pressure of 1 × 10-3∼1 × 10-5 Torr. Observations by Field Emission Scanning Electron Microscope (FESEM) proved that different oxygen pressures influenced the thickness of interfacial SiOx layer formed between the YSZ thin films and Si(100)-substrate. X-ray diffraction (XRD) patterns were used to determine the crystalline structure and calculate the surface grain size of deposited YSZ thin films. XRD patterns also showed that the peaks corresponding to planes (111), (200), (220), and (311) were found and the YSZ thin films revealed the fluorite structure. At lower oxygen pressure (1 × 10-5∼1 × 10-4 Torr) YSZ thin films revealed the (111) preferred orientation and at higher oxygen pressure (5 × 10-4∼1 × 10-3 Torr) YSZ thin films revealed the (200) preferred orientation. The effects of oxygen pressure on the lattice constants and the internal strains of YSZ thin films were also investigated.

AB - Yttria-stabilized zirconia, YSZ, thin films were prepared by E-beam physical vapor deposition (PVD) at 200 °C under oxygen pressure of 1 × 10-3∼1 × 10-5 Torr. Observations by Field Emission Scanning Electron Microscope (FESEM) proved that different oxygen pressures influenced the thickness of interfacial SiOx layer formed between the YSZ thin films and Si(100)-substrate. X-ray diffraction (XRD) patterns were used to determine the crystalline structure and calculate the surface grain size of deposited YSZ thin films. XRD patterns also showed that the peaks corresponding to planes (111), (200), (220), and (311) were found and the YSZ thin films revealed the fluorite structure. At lower oxygen pressure (1 × 10-5∼1 × 10-4 Torr) YSZ thin films revealed the (111) preferred orientation and at higher oxygen pressure (5 × 10-4∼1 × 10-3 Torr) YSZ thin films revealed the (200) preferred orientation. The effects of oxygen pressure on the lattice constants and the internal strains of YSZ thin films were also investigated.

KW - A. Films

KW - B. Interfaces

KW - Yttria-stabilized zirconia

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Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD

Abstract

Keywords

ASJC Scopus subject areas

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