Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions

L. M. Wang; Chen Chung Liu; H. C. Yang; H. E. Horng

doi:10.1016/j.tsf.2003.12.036

Effects of step-edge conditions on the magnetoresistance of La _0.7Sr_0.3MnO₃ tunneling junctions

L. M. Wang^*, Chen Chung Liu, H. C. Yang, H. E. Horng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

La_0.7Sr_0.3MnO₃ (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO₃ substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

Original language	English
Pages (from-to)	359-364
Number of pages	6
Journal	Thin Solid Films
Volume	457
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2003.12.036
Publication status	Published - 2004 Jun 15

Keywords

Atomic force microscopy
Electrical properties and measurements
Sputtering
Tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.12.036

Cite this

@article{88133ecd34f14046a6dee14aa4606a68,

title = "Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions",

abstract = "La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.",

keywords = "Atomic force microscopy, Electrical properties and measurements, Sputtering, Tunneling",

author = "Wang, {L. M.} and Liu, {Chen Chung} and Yang, {H. C.} and Horng, {H. E.}",

note = "Funding Information: The authors thank the National Science Council of the Republic of China for financial support under Grant No. NSC 92-2112-M-212-001 and Grant No. NSC 91-2112-M-002-047. This work was also partially supported by the Da-Yeh University under Grant No. DEE-9122 and by the Ministry of Education under the program of promoting university academic excellence.",

year = "2004",

month = jun,

day = "15",

doi = "10.1016/j.tsf.2003.12.036",

language = "English",

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journal = "Thin Solid Films",

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T1 - Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions

AU - Wang, L. M.

AU - Liu, Chen Chung

AU - Yang, H. C.

AU - Horng, H. E.

N1 - Funding Information: The authors thank the National Science Council of the Republic of China for financial support under Grant No. NSC 92-2112-M-212-001 and Grant No. NSC 91-2112-M-002-047. This work was also partially supported by the Da-Yeh University under Grant No. DEE-9122 and by the Ministry of Education under the program of promoting university academic excellence.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

AB - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

KW - Atomic force microscopy

KW - Electrical properties and measurements

KW - Sputtering

KW - Tunneling

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