Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions

L. M. Wang, Chen Chung Liu, H. C. Yang, H. E. Horng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

Original languageEnglish
Pages (from-to)359-364
Number of pages6
JournalThin Solid Films
Volume457
Issue number2
DOIs
Publication statusPublished - 2004 Jun 15

Keywords

  • Atomic force microscopy
  • Electrical properties and measurements
  • Sputtering
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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