Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

Shiu Jen Liu, Yu Tai Su, Juang Hsin Hsieh

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Abstract

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

Original languageEnglish
Article number033201
JournalJapanese Journal of Applied Physics
Volume53
Issue number3
DOIs
Publication statusPublished - 2014 Mar

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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