Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

Shiu-Jen Liu, Yu Tai Su, Juang Hsin Hsieh

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

Original languageEnglish
Article number033201
JournalJapanese Journal of Applied Physics
Volume53
Issue number3
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Metal insulator transition
Magnetron sputtering
magnetron sputtering
insulators
Annealing
Thin films
annealing
thin films
metals
Oxygen
sharpness
Opacity
oxygen
Sapphire
Superconducting transition temperature
Hysteresis
transmittance
sapphire
X ray photoelectron spectroscopy
transition temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering. / Liu, Shiu-Jen; Su, Yu Tai; Hsieh, Juang Hsin.

In: Japanese Journal of Applied Physics, Vol. 53, No. 3, 033201, 01.01.2014.

Research output: Contribution to journalArticle

@article{e4700341e4914990bec0db3c13ed483b,
title = "Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering",
abstract = "We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.",
author = "Shiu-Jen Liu and Su, {Yu Tai} and Hsieh, {Juang Hsin}",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.033201",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3",

}

TY - JOUR

T1 - Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

AU - Liu, Shiu-Jen

AU - Su, Yu Tai

AU - Hsieh, Juang Hsin

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

AB - We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

UR - http://www.scopus.com/inward/record.url?scp=84903184031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903184031&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.033201

DO - 10.7567/JJAP.53.033201

M3 - Article

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

M1 - 033201

ER -