Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films

Cheng Fu Yang; Chin Guo Kuo; Tai Ping Sun; Sung Mao Wu; Wen Ray Chen

doi:10.1109/INEC.2011.5991811

Effects of post annealing temperatures on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films

Cheng Fu Yang^*, Chin Guo Kuo, Tai Ping Sun, Sung Mao Wu, Wen Ray Chen

^*Corresponding author for this work

Department of Industrial Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Sr_0.6Ba_0.4Nb₂O₆ (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600^°C to 700 ^°C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800^°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991811
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

SrBaNb O
annealing
crystalline orientation

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991811

Cite this

Effects of post annealing temperatures on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films. / Yang, Cheng Fu; Kuo, Chin Guo; Sun, Tai Ping et al.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991811 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, CF, Kuo, CG, Sun, TP, Wu, SM & Chen, WR 2011, Effects of post annealing temperatures on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991811, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991811

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AU - Chen, Wen Ray

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N2 - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

AB - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

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