Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films

Cheng Fu Yang, Chin Guo Kuo, Tai Ping Sun, Sung Mao Wu, Wen Ray Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011 Sep 26
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

Fingerprint

Annealing
Thin films
Crystal orientation
Electric fields
Crystalline materials
Temperature
Leakage currents
Magnetron sputtering
Furnaces
Capacitance
Current density
Diffraction
Crystallization
Polarization
Electric potential

Keywords

  • SrBaNb O
  • annealing
  • crystalline orientation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yang, C. F., Kuo, C. G., Sun, T. P., Wu, S. M., & Chen, W. R. (2011). Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991811] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991811

Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films. / Yang, Cheng Fu; Kuo, Chin Guo; Sun, Tai Ping; Wu, Sung Mao; Chen, Wen Ray.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991811 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, CF, Kuo, CG, Sun, TP, Wu, SM & Chen, WR 2011, Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991811, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11/6/21. https://doi.org/10.1109/INEC.2011.5991811
Yang CF, Kuo CG, Sun TP, Wu SM, Chen WR. Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films. In 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991811. (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991811
Yang, Cheng Fu ; Kuo, Chin Guo ; Sun, Tai Ping ; Wu, Sung Mao ; Chen, Wen Ray. / Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films. 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. (Proceedings - International NanoElectronics Conference, INEC).
@inproceedings{9fbaafa558ca4f25b57062ad1194d2b1,
title = "Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films",
abstract = "Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.",
keywords = "SrBaNb O, annealing, crystalline orientation",
author = "Yang, {Cheng Fu} and Kuo, {Chin Guo} and Sun, {Tai Ping} and Wu, {Sung Mao} and Chen, {Wen Ray}",
year = "2011",
month = "9",
day = "26",
doi = "10.1109/INEC.2011.5991811",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

}

TY - GEN

T1 - Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films

AU - Yang, Cheng Fu

AU - Kuo, Chin Guo

AU - Sun, Tai Ping

AU - Wu, Sung Mao

AU - Chen, Wen Ray

PY - 2011/9/26

Y1 - 2011/9/26

N2 - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

AB - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

KW - SrBaNb O

KW - annealing

KW - crystalline orientation

UR - http://www.scopus.com/inward/record.url?scp=80053024323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053024323&partnerID=8YFLogxK

U2 - 10.1109/INEC.2011.5991811

DO - 10.1109/INEC.2011.5991811

M3 - Conference contribution

AN - SCOPUS:80053024323

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

ER -