Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.