Effects of oxygen bonding on defective semiconducting and metallic single-walled carbon nanotube bundles

Yann Wen Lan, Wen Hao Chang, Shui Jin Lai, Yuan Chih Chang, Cen Shawn Wu, Chieh Hsiung Kuan, Chia Seng Chang, Chii Dong Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the effects of oxygen doping on the electrical properties of defective metallic and semiconducting single-walled carbon nanotube bundles. Carbon vacancies are generated by electron beam knock-out process. The carbon nanotube bundles are placed on top of suspended electrodes produced on a through-hole chip. This allows a physical correlation to be established for transmission electron microscopy inspection and electrical characterization. The dangling carbon bonds of the vacancies are very active and can easily adsorb oxygen molecules. In terms of the semiconducting bundles, oxygen bonding lowers the bandgap and the original p-type bundles thereby modifying them to become bi-polar. For the metallic bundles, a hysteretic bi-stable state in gate-voltage cycling is observed; this is attributed to the electrically controlled dipole field of the oxygen molecules.

Original languageEnglish
Pages (from-to)4619-4627
Number of pages9
JournalCarbon
Volume50
Issue number12
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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    Lan, Y. W., Chang, W. H., Lai, S. J., Chang, Y. C., Wu, C. S., Kuan, C. H., Chang, C. S., & Chen, C. D. (2012). Effects of oxygen bonding on defective semiconducting and metallic single-walled carbon nanotube bundles. Carbon, 50(12), 4619-4627. https://doi.org/10.1016/j.carbon.2012.05.048