Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In-Zn-O films

Shiu-Jen Liu, Kuei Ching Wu, Kun Cheng Peng

Research output: Contribution to journalArticle

Abstract

Amorphous In-Zn-O (a-IZO) films doped with Mo were prepared on glass substrates by using magnetron co-sputtering technique. The Mo concentration was controlled by varying the sputtering power applied on the Mo target. The effects of Mo doping and thermal annealing on the electrical, optical and magnetic properties of the a-IZO films were studied. The electrical properties of a-IZO films were found to be strongly affected by Mo doping and thermal annealing. The optical transmission near the absorption edge of a-IZO films is enhanced by Mo doping due to the decrease in reflection. The optical bandgap estimated to be 3.2 eV of a-IZO films is unaffected by Mo doping and thermal annealing. Moreover, some of Mo-doped films exhibit room-temperature ferromagnetism after annealing.

Original languageEnglish
Pages (from-to)226-230
Number of pages5
JournalMaterials Research Bulletin
Volume66
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Molybdenum
molybdenum
Physical properties
physical properties
Doping (additives)
Annealing
annealing
Sputtering
Electric properties
sputtering
electrical properties
Ferromagnetism
Optical band gaps
Light transmission
ferromagnetism
Hot Temperature
Magnetic properties
Optical properties
magnetic properties
optical properties

Keywords

  • A. Amorphous materials
  • B. Sputtering
  • D. Electrical properties
  • D. Magnetic properties
  • D. Optical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Effects of molybdenum doping and thermal annealing on the physical properties of amorphous In-Zn-O films. / Liu, Shiu-Jen; Wu, Kuei Ching; Peng, Kun Cheng.

In: Materials Research Bulletin, Vol. 66, 01.01.2015, p. 226-230.

Research output: Contribution to journalArticle

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