Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution

Engineering & Materials Science

• Anisotropic etching 100%
• Surface active agents 70%
• Etching 69%
• Silicon 50%
• Surface roughness 26%
• Ultrasonics 21%
• Anionic surfactants 19%
• Wet etching 8%
• Microstructure 8%
• Esters 7%
• Alcohols 7%
• Sodium 6%
• Wetting 6%
• Thin films 6%
• Acids 5%
• Wavelength 5%
• Membranes 5%
• Temperature 5%
• Hydrogen 5%
• Fabrication 4%

Physics & Astronomy

• agitation 83%
• surfactants 61%
• etching 48%
• ultrasonic agitation 38%
• silicon 34%
• roughness 14%
• surface roughness 9%
• isopropyl alcohol 8%
• microstructure 6%
• stirring 6%
• esters 6%
• wettability 6%
• acids 5%
• sodium 5%
• bubbles 4%
• membranes 4%
• reflectance 4%
• hydrogen 3%
• fabrication 3%
• temperature 3%
• thin films 3%
• wavelengths 2%

Chemical Compounds

• Agitation (Mechanical) 97%
• Etching 57%
• Surfactant 43%
• Additive 43%
• Anionic Surfactant 12%
• Surface Roughness 11%
• Microstructure 7%
• Reflectivity 6%
• Bubble 6%
• Purity 5%
• Time 4%
• Wavelength 4%
• Surface 3%
• Sodium Atom 3%
• Ester 3%
• Alcohol 3%
• Hydrogen 2%
• Acid 2%