Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films

  • C. G. Kuo
  • , C. L. Li
  • , C. C. Huang
  • , F. H. Wang
  • , C. F. Yang
  • , I. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, a 1350°C-sintered 98 mol% ZnO-1 mol% Al2O3 (AZO, Zn: Al= 98:2) ceramic was used as a target and deposited on glass using a r.f. magnetron sputtering system at a deposition temperature of 200°C. The effects of different H2 flow rates (H2/(H2+Ar)=0% ~ 9.09%, abbreviated as H2-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated. The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H2 flow rate. For comparison, the 2% H2-deposited AZO films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO films). The effects of H2 plasma on the properties of the H2-deposited AZO films were also studied. The value variations in the optical band gap (Eg) of the H2-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)2 = c(hv-Eg).

Original languageEnglish
Title of host publicationMetallurgy Technology and Materials II
Pages447-451
Number of pages5
DOIs
Publication statusPublished - 2013
Event2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013 - Hong Kong, China
Duration: 2013 Jun 252013 Jun 26

Publication series

NameAdvanced Materials Research
Volume813
ISSN (Print)1022-6680

Other

Other2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013
Country/TerritoryChina
CityHong Kong
Period2013/06/252013/06/26

Keywords

  • AZO
  • H
  • Hydrogen flow rate
  • Optical band gap
  • Plasma

ASJC Scopus subject areas

  • General Engineering

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