Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films

C. G. Kuo, C. L. Li, C. C. Huang, F. H. Wang, C. F. Yang, I. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, a 1350°C-sintered 98 mol% ZnO-1 mol% Al2O3 (AZO, Zn: Al= 98:2) ceramic was used as a target and deposited on glass using a r.f. magnetron sputtering system at a deposition temperature of 200°C. The effects of different H2 flow rates (H2/(H2+Ar)=0% ~ 9.09%, abbreviated as H2-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated. The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H2 flow rate. For comparison, the 2% H2-deposited AZO films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO films). The effects of H2 plasma on the properties of the H2-deposited AZO films were also studied. The value variations in the optical band gap (Eg) of the H2-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)2 = c(hv-Eg).

Original languageEnglish
Title of host publicationMetallurgy Technology and Materials II
Pages447-451
Number of pages5
DOIs
Publication statusPublished - 2013 Nov 6
Event2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013 - Hong Kong, China
Duration: 2013 Jun 252013 Jun 26

Publication series

NameAdvanced Materials Research
Volume813
ISSN (Print)1022-6680

Other

Other2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013
CountryChina
CityHong Kong
Period13/6/2513/6/26

Fingerprint

Flow rate
Plasmas
Optical band gaps
Light transmission
Magnetron sputtering
Crystallization
Glass
Temperature
Defects

Keywords

  • AZO
  • H
  • Hydrogen flow rate
  • Optical band gap
  • Plasma

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kuo, C. G., Li, C. L., Huang, C. C., Wang, F. H., Yang, C. F., & Chen, I. C. (2013). Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films. In Metallurgy Technology and Materials II (pp. 447-451). (Advanced Materials Research; Vol. 813). https://doi.org/10.4028/www.scientific.net/AMR.813.447

Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films. / Kuo, C. G.; Li, C. L.; Huang, C. C.; Wang, F. H.; Yang, C. F.; Chen, I. C.

Metallurgy Technology and Materials II. 2013. p. 447-451 (Advanced Materials Research; Vol. 813).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kuo, CG, Li, CL, Huang, CC, Wang, FH, Yang, CF & Chen, IC 2013, Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films. in Metallurgy Technology and Materials II. Advanced Materials Research, vol. 813, pp. 447-451, 2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013, Hong Kong, China, 13/6/25. https://doi.org/10.4028/www.scientific.net/AMR.813.447
Kuo CG, Li CL, Huang CC, Wang FH, Yang CF, Chen IC. Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films. In Metallurgy Technology and Materials II. 2013. p. 447-451. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.813.447
Kuo, C. G. ; Li, C. L. ; Huang, C. C. ; Wang, F. H. ; Yang, C. F. ; Chen, I. C. / Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films. Metallurgy Technology and Materials II. 2013. pp. 447-451 (Advanced Materials Research).
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