Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width

Chang Chun Lee, Chuan Hsi Liu, Hung Wen Hsu, Min Hui Hung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The layout patterns of nano-scale devices have significant impacts on device performance when an increase in operating velocity is considered. Thus, advanced strain engineering of metal-oxide-semiconductor field-effect transistors (MOSFETs) is necessary when highly scaled gate lengths are employed. The foregoing mechanical effects are observable when a device with a narrow channel width is utilized. However, when a device integrated with an extended poly gate is scaled down to several hundreds of nanometers, the induced stress contours of the channel region and corresponding mobility gain become troublesome and must be resolved. This study investigates the mechanical impacts of extended gate widths on the mobility gains of p-type MOSFETs. The selected MOSFET has a SiGe stressor embedded in its source and drain regions, as well as a compressive contact etch stop layer. Three-dimensional finite element simulation is performed to emulate the stress contour within the Si channel and estimate the related mobility gain. Sensitivity analyses of the simulation results using factorial designs and response surface methodology indicate that stresses within the Si channel are induced by a bending force determined by the extension of the poly width. A significant enhancement in mobility gain is found when an extended poly width combined with proper arrangements of the device geometry is applied.

Original languageEnglish
Pages (from-to)311-315
Number of pages5
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - 2014 Apr 30

Fingerprint

MOSFET devices
metal oxide semiconductors
field effect transistors
factorial design
p-type semiconductors
Geometry
layouts
simulation
engineering
methodology
augmentation
sensitivity
estimates
geometry

Keywords

  • Bending stress
  • CESL
  • Extended gate width
  • Finite element analysis (FEA)
  • SiGe stressor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effects of extended poly gate on the performance of strained P-type metal-oxide-semiconductor field-effect transistors with a narrow channel width. / Lee, Chang Chun; Liu, Chuan Hsi; Hsu, Hung Wen; Hung, Min Hui.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 311-315.

Research output: Contribution to journalArticle

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