Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu; Shih Hao Su; Hau Wei Fang; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1016/j.apsusc.2011.06.129

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu^*, Shih Hao Su, Hau Wei Fang, Jang Hsing Hsieh, Jenh Yih Juang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Amorphous thin films of InGaZnO ₄ (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

Original language	English
Pages (from-to)	10018-10021
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	23
DOIs	https://doi.org/10.1016/j.apsusc.2011.06.129
Publication status	Published - 2011 Sept 15

Keywords

Amorphous transparent conducting oxide
Cr doping
Diluted magnetic semiconductor
Indium gallium zinc oxide films

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2011.06.129

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title = "Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films",

abstract = " Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.",

keywords = "Amorphous transparent conducting oxide, Cr doping, Diluted magnetic semiconductor, Indium gallium zinc oxide films",

author = "Liu, {Shiu Jen} and Su, {Shih Hao} and Fang, {Hau Wei} and Hsieh, {Jang Hsing} and Juang, {Jenh Yih}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under grant no. NSC 98-2112-M-003-005-MY3 .",

year = "2011",

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day = "15",

doi = "10.1016/j.apsusc.2011.06.129",

language = "English",

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journal = "Applied Surface Science",

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T1 - Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

AU - Liu, Shiu Jen

AU - Su, Shih Hao

AU - Fang, Hau Wei

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under grant no. NSC 98-2112-M-003-005-MY3 .

PY - 2011/9/15

Y1 - 2011/9/15

N2 - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

AB - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

KW - Amorphous transparent conducting oxide

KW - Cr doping

KW - Diluted magnetic semiconductor

KW - Indium gallium zinc oxide films

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JO - Applied Surface Science

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Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Abstract

Keywords

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