Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu-Jen Liu, Shih Hao Su, Hau Wei Fang, Jang Hsing Hsieh, Jenh Yih Juang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

Original languageEnglish
Pages (from-to)10018-10021
Number of pages4
JournalApplied Surface Science
Volume257
Issue number23
DOIs
Publication statusPublished - 2011 Sep 15

Fingerprint

Physical properties
Doping (additives)
Amorphous films
Light transmission
Energy gap
Thin films
Ferromagnetism
Carrier mobility
Growth temperature
Pulsed laser deposition
Carrier concentration
Magnetic properties
Electric properties
Optical properties
Temperature

Keywords

  • Amorphous transparent conducting oxide
  • Cr doping
  • Diluted magnetic semiconductor
  • Indium gallium zinc oxide films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films. / Liu, Shiu-Jen; Su, Shih Hao; Fang, Hau Wei; Hsieh, Jang Hsing; Juang, Jenh Yih.

In: Applied Surface Science, Vol. 257, No. 23, 15.09.2011, p. 10018-10021.

Research output: Contribution to journalArticle

Liu, Shiu-Jen ; Su, Shih Hao ; Fang, Hau Wei ; Hsieh, Jang Hsing ; Juang, Jenh Yih. / Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films. In: Applied Surface Science. 2011 ; Vol. 257, No. 23. pp. 10018-10021.
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