Effects of an Os layer on the magnetic properties of CoFe/IrMn

Tai Yen Peng, Chi-Kuen Lo, San Yuan Chen, Y. D. Yao

Research output: Contribution to journalArticle

Abstract

The uses of Os as an antidiffusion and buffer layer in IrMn exchange coupled CoFe film were investigated. For the purpose of antidiffusion, the inserted Os layer showed a distinct improvement of S > 0.9, with HC slightly increasing by 1.6 times for the CoFeOsMnOs multilayer after 400 °C annealing, even though the Os thickness was as thin as 0.3 nm. Furthermore, with a 0.3 nm Os barrier, the 350 °C annealed CoFeOsIrMnCoFe showed almost the same magnetic behavior as the as-deposited state, while the Hex of the upper part of the CoFeOsIrMn changed from 100 to 190 Oe. In addition, as a buffer layer, the Os buffer layer could enhance the diffraction peak intensities of IrMn (111) Os (002) and CoFe (111), and the Hex of CoFeIrMn was proportional to the Os thickness. A 120 Oe of Hex was achieved by using an 11 nm Os buffer layer in a CoFe 10 nmIrMn 15 nm bottom type film. These results show that Os has the potential to be an antidiffusion and buffer layer in a magnetic multilayer.

Original languageEnglish
Article number08C907
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006 May 25

Fingerprint

magnetic properties
buffers
annealing
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effects of an Os layer on the magnetic properties of CoFe/IrMn. / Peng, Tai Yen; Lo, Chi-Kuen; Chen, San Yuan; Yao, Y. D.

In: Journal of Applied Physics, Vol. 99, No. 8, 08C907, 25.05.2006.

Research output: Contribution to journalArticle

Peng, Tai Yen ; Lo, Chi-Kuen ; Chen, San Yuan ; Yao, Y. D. / Effects of an Os layer on the magnetic properties of CoFe/IrMn. In: Journal of Applied Physics. 2006 ; Vol. 99, No. 8.
@article{c4435ae93ede4b2dab332a77f1fce527,
title = "Effects of an Os layer on the magnetic properties of CoFe/IrMn",
abstract = "The uses of Os as an antidiffusion and buffer layer in IrMn exchange coupled CoFe film were investigated. For the purpose of antidiffusion, the inserted Os layer showed a distinct improvement of S > 0.9, with HC slightly increasing by 1.6 times for the CoFeOsMnOs multilayer after 400 °C annealing, even though the Os thickness was as thin as 0.3 nm. Furthermore, with a 0.3 nm Os barrier, the 350 °C annealed CoFeOsIrMnCoFe showed almost the same magnetic behavior as the as-deposited state, while the Hex of the upper part of the CoFeOsIrMn changed from 100 to 190 Oe. In addition, as a buffer layer, the Os buffer layer could enhance the diffraction peak intensities of IrMn (111) Os (002) and CoFe (111), and the Hex of CoFeIrMn was proportional to the Os thickness. A 120 Oe of Hex was achieved by using an 11 nm Os buffer layer in a CoFe 10 nmIrMn 15 nm bottom type film. These results show that Os has the potential to be an antidiffusion and buffer layer in a magnetic multilayer.",
author = "Peng, {Tai Yen} and Chi-Kuen Lo and Chen, {San Yuan} and Yao, {Y. D.}",
year = "2006",
month = "5",
day = "25",
doi = "10.1063/1.2170053",
language = "English",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Effects of an Os layer on the magnetic properties of CoFe/IrMn

AU - Peng, Tai Yen

AU - Lo, Chi-Kuen

AU - Chen, San Yuan

AU - Yao, Y. D.

PY - 2006/5/25

Y1 - 2006/5/25

N2 - The uses of Os as an antidiffusion and buffer layer in IrMn exchange coupled CoFe film were investigated. For the purpose of antidiffusion, the inserted Os layer showed a distinct improvement of S > 0.9, with HC slightly increasing by 1.6 times for the CoFeOsMnOs multilayer after 400 °C annealing, even though the Os thickness was as thin as 0.3 nm. Furthermore, with a 0.3 nm Os barrier, the 350 °C annealed CoFeOsIrMnCoFe showed almost the same magnetic behavior as the as-deposited state, while the Hex of the upper part of the CoFeOsIrMn changed from 100 to 190 Oe. In addition, as a buffer layer, the Os buffer layer could enhance the diffraction peak intensities of IrMn (111) Os (002) and CoFe (111), and the Hex of CoFeIrMn was proportional to the Os thickness. A 120 Oe of Hex was achieved by using an 11 nm Os buffer layer in a CoFe 10 nmIrMn 15 nm bottom type film. These results show that Os has the potential to be an antidiffusion and buffer layer in a magnetic multilayer.

AB - The uses of Os as an antidiffusion and buffer layer in IrMn exchange coupled CoFe film were investigated. For the purpose of antidiffusion, the inserted Os layer showed a distinct improvement of S > 0.9, with HC slightly increasing by 1.6 times for the CoFeOsMnOs multilayer after 400 °C annealing, even though the Os thickness was as thin as 0.3 nm. Furthermore, with a 0.3 nm Os barrier, the 350 °C annealed CoFeOsIrMnCoFe showed almost the same magnetic behavior as the as-deposited state, while the Hex of the upper part of the CoFeOsIrMn changed from 100 to 190 Oe. In addition, as a buffer layer, the Os buffer layer could enhance the diffraction peak intensities of IrMn (111) Os (002) and CoFe (111), and the Hex of CoFeIrMn was proportional to the Os thickness. A 120 Oe of Hex was achieved by using an 11 nm Os buffer layer in a CoFe 10 nmIrMn 15 nm bottom type film. These results show that Os has the potential to be an antidiffusion and buffer layer in a magnetic multilayer.

UR - http://www.scopus.com/inward/record.url?scp=33646727550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646727550&partnerID=8YFLogxK

U2 - 10.1063/1.2170053

DO - 10.1063/1.2170053

M3 - Article

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 08C907

ER -