Effects of an Os buffer layer on structure and exchange bias properties of CoFe/IrMn fabricated on Si(100) and Si(111)

INIS

• layers 100%
• peaks 100%
• buffers 100%
• magnetization 66%
• increasing 33%
• orientation 33%
• surfaces 33%
• diffraction 33%
• hysteresis 33%
• tuning 33%
• thickness 33%
• crystal defects 33%
• fcc lattices 33%

Physics

• Exchange Bias 100%
• Magnetization 66%
• Diffraction 33%
• Increasing 33%
• Hysteresis 33%
• Lattice Mismatch 33%