Effects of an Os buffer layer on structure and exchange bias properties of CoFe/IrMn fabricated on Si(100) and Si(111)

Tai Yen Peng, Chi-Kuen Lo, San Yuan Chen, Y. D. Yao

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismatch between Os (0002) and IrMn (111) is as low as 2.6%, the CoFe/IrMn grown on H-Si(100) showed a strong IrMn (111) diffraction peak, while a very weak IrMn (111) peak appeared on H-Si (111). With increasing Os thickness (dos), the IrMn (200) peak was weakened, while the IrMn (111) became strong on H-Si (100). For the CoFe/IrMn grown on H-Si(111), no obvious structural change appeared. Os plays an important role on tuning the IrMn to result in the exchange bias. On the other hand, CoFe/IrMn showed an exchange field (Hex) on both H-Si(100) and H-Si(111) with the Os buffer layer; however, the magnetization switching process was different due to different the crystalline degree. A sharp magnetization switching process occurs for IrMn(111) on Os/Cu/H-Si(100) with a square hysteresis loop. A 370 and 310 Oe of Hex was found in textured CoFe/IrMn on Os/Cu/H-Si(100) and Os/Cu/H-Si(111), respectively.

Original languageEnglish
Pages (from-to)894-896
Number of pages3
JournalIEEE Transactions on Magnetics
Volume43
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

Fingerprint

Buffer layers
Magnetization
buffers
Lattice mismatch
Hysteresis loops
magnetization
Tuning
Diffraction
Crystalline materials
mesh
hysteresis
tuning
diffraction

Keywords

  • Buffer layer
  • Osmium
  • Textured film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Effects of an Os buffer layer on structure and exchange bias properties of CoFe/IrMn fabricated on Si(100) and Si(111). / Peng, Tai Yen; Lo, Chi-Kuen; Chen, San Yuan; Yao, Y. D.

In: IEEE Transactions on Magnetics, Vol. 43, No. 2, 01.02.2007, p. 894-896.

Research output: Contribution to journalArticle

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abstract = "The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismatch between Os (0002) and IrMn (111) is as low as 2.6{\%}, the CoFe/IrMn grown on H-Si(100) showed a strong IrMn (111) diffraction peak, while a very weak IrMn (111) peak appeared on H-Si (111). With increasing Os thickness (dos), the IrMn (200) peak was weakened, while the IrMn (111) became strong on H-Si (100). For the CoFe/IrMn grown on H-Si(111), no obvious structural change appeared. Os plays an important role on tuning the IrMn to result in the exchange bias. On the other hand, CoFe/IrMn showed an exchange field (Hex) on both H-Si(100) and H-Si(111) with the Os buffer layer; however, the magnetization switching process was different due to different the crystalline degree. A sharp magnetization switching process occurs for IrMn(111) on Os/Cu/H-Si(100) with a square hysteresis loop. A 370 and 310 Oe of Hex was found in textured CoFe/IrMn on Os/Cu/H-Si(100) and Os/Cu/H-Si(111), respectively.",
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N2 - The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismatch between Os (0002) and IrMn (111) is as low as 2.6%, the CoFe/IrMn grown on H-Si(100) showed a strong IrMn (111) diffraction peak, while a very weak IrMn (111) peak appeared on H-Si (111). With increasing Os thickness (dos), the IrMn (200) peak was weakened, while the IrMn (111) became strong on H-Si (100). For the CoFe/IrMn grown on H-Si(111), no obvious structural change appeared. Os plays an important role on tuning the IrMn to result in the exchange bias. On the other hand, CoFe/IrMn showed an exchange field (Hex) on both H-Si(100) and H-Si(111) with the Os buffer layer; however, the magnetization switching process was different due to different the crystalline degree. A sharp magnetization switching process occurs for IrMn(111) on Os/Cu/H-Si(100) with a square hysteresis loop. A 370 and 310 Oe of Hex was found in textured CoFe/IrMn on Os/Cu/H-Si(100) and Os/Cu/H-Si(111), respectively.

AB - The structural and exchange bias properties of CoFe/IrMn prepared on Si (100) and Si (111) with an Os/Cu buffer layer were investigated. Since the Os (0002) surface mesh has the same atomic arrangement as fcc (111) orientation, and the lattice mismatch between Os (0002) and IrMn (111) is as low as 2.6%, the CoFe/IrMn grown on H-Si(100) showed a strong IrMn (111) diffraction peak, while a very weak IrMn (111) peak appeared on H-Si (111). With increasing Os thickness (dos), the IrMn (200) peak was weakened, while the IrMn (111) became strong on H-Si (100). For the CoFe/IrMn grown on H-Si(111), no obvious structural change appeared. Os plays an important role on tuning the IrMn to result in the exchange bias. On the other hand, CoFe/IrMn showed an exchange field (Hex) on both H-Si(100) and H-Si(111) with the Os buffer layer; however, the magnetization switching process was different due to different the crystalline degree. A sharp magnetization switching process occurs for IrMn(111) on Os/Cu/H-Si(100) with a square hysteresis loop. A 370 and 310 Oe of Hex was found in textured CoFe/IrMn on Os/Cu/H-Si(100) and Os/Cu/H-Si(111), respectively.

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