TY - JOUR
T1 - Effects of Ag contents and deposition temperatures on the electrical and optical behaviors of Ag-doped Cu2O thin films
AU - Tseng, C. C.
AU - Hsieh, J. H.
AU - Liu, S. J.
AU - Wu, W.
N1 - Funding Information:
The financial support provided by the National Science Council of the Republic of China (Taiwan) through the project NSC 96-2221-E-131-007 is greatly appreciated.
PY - 2009/12/31
Y1 - 2009/12/31
N2 - Cu2O-Ag thin films were co-deposited by reactive sputtering on glass substrates. During deposition, Ag contents and deposited temperatures were varied. After deposition, a UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. The results showed that the Cu2O-Ag thin films had a decreased optical transmittance with the increase of Ag contents. The resistivity was also decreased, which is most likely due to the formation of Ag phase. Through the measurement of photo-induced conductivity, it was found that, when Ag concentration was at 4 at.%, the film had the highest increase in conductivity under light irradiation. This is due to the co-existence of Ag2O and Cu2O. However, when deposited at a temperature higher than room temperature, the photo-induced conductivity of this film became less obvious, apparently due to the dissociation of Ag2O. The results of Photoluminescence (PL) measurement confirmed that the Cu2O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of conductivity.
AB - Cu2O-Ag thin films were co-deposited by reactive sputtering on glass substrates. During deposition, Ag contents and deposited temperatures were varied. After deposition, a UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. The results showed that the Cu2O-Ag thin films had a decreased optical transmittance with the increase of Ag contents. The resistivity was also decreased, which is most likely due to the formation of Ag phase. Through the measurement of photo-induced conductivity, it was found that, when Ag concentration was at 4 at.%, the film had the highest increase in conductivity under light irradiation. This is due to the co-existence of Ag2O and Cu2O. However, when deposited at a temperature higher than room temperature, the photo-induced conductivity of this film became less obvious, apparently due to the dissociation of Ag2O. The results of Photoluminescence (PL) measurement confirmed that the Cu2O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of conductivity.
KW - Co-sputtering
KW - CuO-Ag thin films
KW - Opto-electronic properties
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U2 - 10.1016/j.tsf.2009.09.116
DO - 10.1016/j.tsf.2009.09.116
M3 - Article
AN - SCOPUS:70449487651
SN - 0040-6090
VL - 518
SP - 1407
EP - 1410
JO - Thin Solid Films
JF - Thin Solid Films
IS - 5
ER -