Effects of Ag contents and deposition temperatures on the electrical and optical behaviors of Ag-doped Cu2O thin films

C. C. Tseng, J. H. Hsieh, S. J. Liu, W. Wu

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Cu2O-Ag thin films were co-deposited by reactive sputtering on glass substrates. During deposition, Ag contents and deposited temperatures were varied. After deposition, a UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. The results showed that the Cu2O-Ag thin films had a decreased optical transmittance with the increase of Ag contents. The resistivity was also decreased, which is most likely due to the formation of Ag phase. Through the measurement of photo-induced conductivity, it was found that, when Ag concentration was at 4 at.%, the film had the highest increase in conductivity under light irradiation. This is due to the co-existence of Ag2O and Cu2O. However, when deposited at a temperature higher than room temperature, the photo-induced conductivity of this film became less obvious, apparently due to the dissociation of Ag2O. The results of Photoluminescence (PL) measurement confirmed that the Cu2O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of conductivity.

Original languageEnglish
Pages (from-to)1407-1410
Number of pages4
JournalThin Solid Films
Volume518
Issue number5
DOIs
Publication statusPublished - 2009 Dec 31

Keywords

  • Co-sputtering
  • CuO-Ag thin films
  • Opto-electronic properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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