Effect of Ta2O5 doping on electrical characteristics of SrTiO3 metal-insulator-metal capacitors

Ching Chien Huang; Chun Hu Cheng; Bo Heng Liou; Fon Shan Yeh; Albert Chin

doi:10.1143/JJAP.48.081401

Effect of Ta₂O₅ doping on electrical characteristics of SrTiO₃ metal-insulator-metal capacitors

Ching Chien Huang^*, Chun Hu Cheng, Bo Heng Liou, Fon Shan Yeh, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of Ta₂O5 doping on electrical characteristics of SrTiO₃ (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta₂O₅-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V² and a high capacitance density of ̃20fF/μm ² are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

Original language	English
Pages (from-to)	814011-814016
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	8 Part 1
DOIs	https://doi.org/10.1143/JJAP.48.081401
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Effect of Ta2O5 doping on electrical characteristics of SrTiO3 metal-insulator-metal capacitors",

abstract = "The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of{\~ }20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.",

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T1 - Effect of Ta2O5 doping on electrical characteristics of SrTiO3 metal-insulator-metal capacitors

AU - Huang, Ching Chien

AU - Cheng, Chun Hu

AU - Liou, Bo Heng

AU - Yeh, Fon Shan

AU - Chin, Albert

PY - 2009

Y1 - 2009

N2 - The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of ̃20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

AB - The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of ̃20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

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Effect of Ta₂O₅ doping on electrical characteristics of SrTiO₃ metal-insulator-metal capacitors

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