Effect of Ta2O5 doping on electrical characteristics of SrTiO3 metal-insulator-metal capacitors

Ching Chien Huang, Chun Hu Cheng, Bo Heng Liou, Fon Shan Yeh, Albert Chin

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Abstract

The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of ̃20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.

Original languageEnglish
Pages (from-to)814011-814016
Number of pages6
JournalJapanese Journal of Applied Physics
Volume48
Issue number8 Part 1
DOIs
Publication statusPublished - 2009 Dec 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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