The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-α) of 510ppm/V2 and a high capacitance density of ̃20fF/μm 2 are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-α, and longterm reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO.
ASJC Scopus subject areas
- Physics and Astronomy(all)