Effect of surface treatment on the electron field emission property of nano-diamond films

Yen Chih Lee; Debabrata Pradhan; Su Jien Lin; Chih Ta Chia; Hsiu Fung Cheng; I. Nan Lin

doi:10.1016/j.diamond.2005.08.059

Effect of surface treatment on the electron field emission property of nano-diamond films

Yen Chih Lee, Debabrata Pradhan, Su Jien Lin, Chih Ta Chia, Hsiu Fung Cheng, I. Nan Lin^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

Nano-diamond films having grain size around 20 nm were deposited by bias enhanced growth (BEG) method. Different surface treatments were carried out to increase their field emission properties and their effects are clearly noticed. Surface morphology of different surface treated nano-diamond films was examined. There was no significant change in the curve of Raman spectra of different surface treated samples. Raman spectra were typically of similar nature to nano-diamond film. Field emission results were more interesting. Biased in hydrogen plasma treated nano-diamond film has shown best electron emission behavior and low turn-on-field (E₀). The turn-on-field of bias-treated nano-diamond film was 19.5 V/μm. The decrease of turn-on-field (∼6 V/μm) of biased treated nano-diamond film from as-grown BEG film was attributed to the formation of thin sp² layer and more defects on the surface of film by hydrogen ion bombardment. Moreover, hydrogen-plasma treated nano-diamond film was also found to be good for electron emission but there was no improvement in electron emission as in the case of air plasma treated nano-diamond films.

Original language	English
Pages (from-to)	2055-2058
Number of pages	4
Journal	Diamond and Related Materials
Volume	14
Issue number	11-12
DOIs	https://doi.org/10.1016/j.diamond.2005.08.059
Publication status	Published - 2005 Nov
Event	Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - Duration: 2005 May 11 → 2005 May 14

Keywords

Boron doping
Electron field emission
Nano-diamond
Surface treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.08.059

Cite this

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title = "Effect of surface treatment on the electron field emission property of nano-diamond films",

abstract = "Nano-diamond films having grain size around 20 nm were deposited by bias enhanced growth (BEG) method. Different surface treatments were carried out to increase their field emission properties and their effects are clearly noticed. Surface morphology of different surface treated nano-diamond films was examined. There was no significant change in the curve of Raman spectra of different surface treated samples. Raman spectra were typically of similar nature to nano-diamond film. Field emission results were more interesting. Biased in hydrogen plasma treated nano-diamond film has shown best electron emission behavior and low turn-on-field (E0). The turn-on-field of bias-treated nano-diamond film was 19.5 V/μm. The decrease of turn-on-field (∼6 V/μm) of biased treated nano-diamond film from as-grown BEG film was attributed to the formation of thin sp2 layer and more defects on the surface of film by hydrogen ion bombardment. Moreover, hydrogen-plasma treated nano-diamond film was also found to be good for electron emission but there was no improvement in electron emission as in the case of air plasma treated nano-diamond films.",

keywords = "Boron doping, Electron field emission, Nano-diamond, Surface treatment",

author = "Lee, {Yen Chih} and Debabrata Pradhan and Lin, {Su Jien} and Chia, {Chih Ta} and Cheng, {Hsiu Fung} and Lin, {I. Nan}",

note = "Funding Information: The authors would like to thank National Science Council, R.O.C. for the support of this research through the project No. NSC 93-2112-M-032-010.; Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue ; Conference date: 11-05-2005 Through 14-05-2005",

year = "2005",

month = nov,

doi = "10.1016/j.diamond.2005.08.059",

language = "English",

volume = "14",

pages = "2055--2058",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

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}

TY - JOUR

T1 - Effect of surface treatment on the electron field emission property of nano-diamond films

AU - Lee, Yen Chih

AU - Pradhan, Debabrata

AU - Lin, Su Jien

AU - Chia, Chih Ta

AU - Cheng, Hsiu Fung

AU - Lin, I. Nan

N1 - Funding Information: The authors would like to thank National Science Council, R.O.C. for the support of this research through the project No. NSC 93-2112-M-032-010.

PY - 2005/11

Y1 - 2005/11

N2 - Nano-diamond films having grain size around 20 nm were deposited by bias enhanced growth (BEG) method. Different surface treatments were carried out to increase their field emission properties and their effects are clearly noticed. Surface morphology of different surface treated nano-diamond films was examined. There was no significant change in the curve of Raman spectra of different surface treated samples. Raman spectra were typically of similar nature to nano-diamond film. Field emission results were more interesting. Biased in hydrogen plasma treated nano-diamond film has shown best electron emission behavior and low turn-on-field (E0). The turn-on-field of bias-treated nano-diamond film was 19.5 V/μm. The decrease of turn-on-field (∼6 V/μm) of biased treated nano-diamond film from as-grown BEG film was attributed to the formation of thin sp2 layer and more defects on the surface of film by hydrogen ion bombardment. Moreover, hydrogen-plasma treated nano-diamond film was also found to be good for electron emission but there was no improvement in electron emission as in the case of air plasma treated nano-diamond films.

AB - Nano-diamond films having grain size around 20 nm were deposited by bias enhanced growth (BEG) method. Different surface treatments were carried out to increase their field emission properties and their effects are clearly noticed. Surface morphology of different surface treated nano-diamond films was examined. There was no significant change in the curve of Raman spectra of different surface treated samples. Raman spectra were typically of similar nature to nano-diamond film. Field emission results were more interesting. Biased in hydrogen plasma treated nano-diamond film has shown best electron emission behavior and low turn-on-field (E0). The turn-on-field of bias-treated nano-diamond film was 19.5 V/μm. The decrease of turn-on-field (∼6 V/μm) of biased treated nano-diamond film from as-grown BEG film was attributed to the formation of thin sp2 layer and more defects on the surface of film by hydrogen ion bombardment. Moreover, hydrogen-plasma treated nano-diamond film was also found to be good for electron emission but there was no improvement in electron emission as in the case of air plasma treated nano-diamond films.

KW - Boron doping

KW - Electron field emission

KW - Nano-diamond

KW - Surface treatment

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DO - 10.1016/j.diamond.2005.08.059

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T2 - Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue

Y2 - 11 May 2005 through 14 May 2005

ER -

Effect of surface treatment on the electron field emission property of nano-diamond films

Abstract

Keywords

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