Effect of SnO2 addition on the dielectric properties of Ba 2Ti9O20 ceramics in the high-frequency regime

Hsiang Lin Liu, Hsin I. Chen, Yuan Tai Tzeng, Chia Ta Chia, Kuo Chien Hsu, Chen Chung Chi, Chi Ben Chang, Keh Chyang Leou, I. Nan Lin

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Abstract

The effect of Sn O2 addition on the high-frequency dielectric properties of Ba2 Ti9 O20 ceramics has been investigated using terahertz time-domain spectroscopy, far-infrared (FIR) reflectivity, and Raman-scattering measurements. The dielectric constants determined from the terahertz and FIR spectra are smaller than that taken in the microwave frequency region. In contrast, the increase of the dielectric loss with increasing frequency is due to some resonance modes above 1 THz. Importantly, our data clearly show that the Sn O2 (2.4 mole %) addition degraded the dielectric properties of Ba2 Ti9 O20 ceramics, which is ascribed to the deterioration on the coherency of lattice vibrational characteristics for these materials.

Original languageEnglish
Article number094104
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
Publication statusPublished - 2006 Nov 23

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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