Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor

Chien Chen Diao, Jing Liu, Cheng Fu Yang, Chin Guo Kuo, Cheng Yi Chen, Yun I. Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, Nd2O3 was used as the dopant and the commercial Sr2SiO4:Nd phosphors was produced by using solid-state reaction method. The Sr2SiO4:Nd phosphors was sintered at the temperature range of 1000°C∼1300°C for 2 h. From the results of X-ray diffraction patterns, even sintered at 1000°C only Sr2SiO4 phase was observed, no secondary and unknown phases were residual in the calcined Sr2SiO4:Nd powders. We had found that the sintering temperature had large effect on the luminescence characteristics of the Nd2O3-doped Sr2SiO4 phosphors. The CIE colorimetric data of Sr2SiO4:Nd phosphors as a function of sintering temperature was also investigated in this study. We found that the Sr2SiO4:Nd phosphors revealed a dark blue or a ultraviolet light.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Advanced Materials for Science and Engineering
Subtitle of host publicationInnovation, Science and Engineering, IEEE-ICAMSE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages263-266
Number of pages4
ISBN (Electronic)9781509038695
DOIs
Publication statusPublished - 2017 Feb 2
Event2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016 - Tainan, Taiwan
Duration: 2016 Nov 122016 Nov 13

Other

Other2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016
CountryTaiwan
CityTainan
Period16/11/1216/11/13

Fingerprint

Phosphors
Photoluminescence
Sintering
Temperature
Solid state reactions
Powders
Diffraction patterns
Luminescence
Doping (additives)
neodymium oxide
X ray diffraction

Keywords

  • Phosphors
  • Photoluminescence
  • Sintering Temperature
  • SrSiO

ASJC Scopus subject areas

  • Hardware and Architecture
  • Civil and Structural Engineering
  • Mechanics of Materials
  • Media Technology
  • Materials Science (miscellaneous)
  • Electronic, Optical and Magnetic Materials

Cite this

Diao, C. C., Liu, J., Yang, C. F., Kuo, C. G., Chen, C. Y., & Ho, Y. I. (2017). Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor. In Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016 (pp. 263-266). [7840305] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAMSE.2016.7840305

Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor. / Diao, Chien Chen; Liu, Jing; Yang, Cheng Fu; Kuo, Chin Guo; Chen, Cheng Yi; Ho, Yun I.

Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 263-266 7840305.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diao, CC, Liu, J, Yang, CF, Kuo, CG, Chen, CY & Ho, YI 2017, Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor. in Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016., 7840305, Institute of Electrical and Electronics Engineers Inc., pp. 263-266, 2016 IEEE International Conference on Advanced Materials for Science and Engineering, IEEE-ICAMSE 2016, Tainan, Taiwan, 16/11/12. https://doi.org/10.1109/ICAMSE.2016.7840305
Diao CC, Liu J, Yang CF, Kuo CG, Chen CY, Ho YI. Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor. In Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 263-266. 7840305 https://doi.org/10.1109/ICAMSE.2016.7840305
Diao, Chien Chen ; Liu, Jing ; Yang, Cheng Fu ; Kuo, Chin Guo ; Chen, Cheng Yi ; Ho, Yun I. / Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor. Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering: Innovation, Science and Engineering, IEEE-ICAMSE 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 263-266
@inproceedings{b8f8c3195fb54783bf1ad4e3eb6e8997,
title = "Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor",
abstract = "In this study, Nd2O3 was used as the dopant and the commercial Sr2SiO4:Nd phosphors was produced by using solid-state reaction method. The Sr2SiO4:Nd phosphors was sintered at the temperature range of 1000°C∼1300°C for 2 h. From the results of X-ray diffraction patterns, even sintered at 1000°C only Sr2SiO4 phase was observed, no secondary and unknown phases were residual in the calcined Sr2SiO4:Nd powders. We had found that the sintering temperature had large effect on the luminescence characteristics of the Nd2O3-doped Sr2SiO4 phosphors. The CIE colorimetric data of Sr2SiO4:Nd phosphors as a function of sintering temperature was also investigated in this study. We found that the Sr2SiO4:Nd phosphors revealed a dark blue or a ultraviolet light.",
keywords = "Phosphors, Photoluminescence, Sintering Temperature, SrSiO",
author = "Diao, {Chien Chen} and Jing Liu and Yang, {Cheng Fu} and Kuo, {Chin Guo} and Chen, {Cheng Yi} and Ho, {Yun I.}",
year = "2017",
month = "2",
day = "2",
doi = "10.1109/ICAMSE.2016.7840305",
language = "English",
pages = "263--266",
booktitle = "Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Effect of sintering temperature on the photoluminescence characteristics of the Nd2O3-doped SnSiO4 phosphor

AU - Diao, Chien Chen

AU - Liu, Jing

AU - Yang, Cheng Fu

AU - Kuo, Chin Guo

AU - Chen, Cheng Yi

AU - Ho, Yun I.

PY - 2017/2/2

Y1 - 2017/2/2

N2 - In this study, Nd2O3 was used as the dopant and the commercial Sr2SiO4:Nd phosphors was produced by using solid-state reaction method. The Sr2SiO4:Nd phosphors was sintered at the temperature range of 1000°C∼1300°C for 2 h. From the results of X-ray diffraction patterns, even sintered at 1000°C only Sr2SiO4 phase was observed, no secondary and unknown phases were residual in the calcined Sr2SiO4:Nd powders. We had found that the sintering temperature had large effect on the luminescence characteristics of the Nd2O3-doped Sr2SiO4 phosphors. The CIE colorimetric data of Sr2SiO4:Nd phosphors as a function of sintering temperature was also investigated in this study. We found that the Sr2SiO4:Nd phosphors revealed a dark blue or a ultraviolet light.

AB - In this study, Nd2O3 was used as the dopant and the commercial Sr2SiO4:Nd phosphors was produced by using solid-state reaction method. The Sr2SiO4:Nd phosphors was sintered at the temperature range of 1000°C∼1300°C for 2 h. From the results of X-ray diffraction patterns, even sintered at 1000°C only Sr2SiO4 phase was observed, no secondary and unknown phases were residual in the calcined Sr2SiO4:Nd powders. We had found that the sintering temperature had large effect on the luminescence characteristics of the Nd2O3-doped Sr2SiO4 phosphors. The CIE colorimetric data of Sr2SiO4:Nd phosphors as a function of sintering temperature was also investigated in this study. We found that the Sr2SiO4:Nd phosphors revealed a dark blue or a ultraviolet light.

KW - Phosphors

KW - Photoluminescence

KW - Sintering Temperature

KW - SrSiO

UR - http://www.scopus.com/inward/record.url?scp=85015215167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015215167&partnerID=8YFLogxK

U2 - 10.1109/ICAMSE.2016.7840305

DO - 10.1109/ICAMSE.2016.7840305

M3 - Conference contribution

SP - 263

EP - 266

BT - Proceedings of the IEEE International Conference on Advanced Materials for Science and Engineering

PB - Institute of Electrical and Electronics Engineers Inc.

ER -