INIS
applications
100%
layers
100%
oxidation
100%
plasma
100%
transistors
100%
thin films
100%
tin oxides
100%
oxygen
57%
performance
28%
density of states
28%
simulation
14%
origin
14%
processing
14%
modeling
14%
devices
14%
industry
14%
panels
14%
mobility
14%
voltage
14%
vacancies
14%
computerized simulation
14%
defects
14%
Chemistry
Application
100%
Liquid Film
100%
Oxidation Reaction
100%
Plasma
100%
Tin Oxide
100%
Dioxygen
42%
Density of State
28%
Device
14%
Voltage
14%
Compound Mobility
14%
Time
14%
Donor
14%
Thin Film Types
14%
Base
14%
Gaussian
14%
Field Effect
14%
Industry
14%
Material Science
Tin Oxide
100%
Thin-Film Transistor
100%
Oxidation Reaction
100%
Density
40%
Thin Films
40%
Devices
20%
Oxygen Vacancy
20%