INIS
simulation
100%
modeling
100%
plasma
100%
transistors
100%
thin films
100%
fluorination
100%
performance
60%
devices
40%
computerized simulation
40%
defects
40%
density of states
40%
ions
20%
origin
20%
power
20%
mobility
20%
interfaces
20%
vacancies
20%
etching
20%
traps
20%
x-ray photoelectron spectroscopy
20%
xrd
20%
fluorine
20%
Physics
Performance
100%
Simulation
100%
Transistor
100%
Thin Films
100%
Density of States
66%
Model
33%
Ratios
33%
X Ray Diffraction
33%
Ion
33%
X Ray Spectroscopy
33%
Field Effect
33%
Etching
33%
Chemistry
Liquid Film
100%
Plasma
100%
Fluorination
100%
Density of State
40%
Etching
20%
Device
20%
Compound Mobility
20%
Ion
20%
Donor
20%
Gaussian
20%
Field Effect
20%
Fluorine
20%
Material Science
Devices
100%
Density
100%
Thin-Film Transistor
100%
X-Ray Diffraction
50%
X-Ray Photoelectron Spectroscopy
50%
Reactive Ion Etching
50%