Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Kadiyam Rajshekar; Hsiao Hsuan Hsu; Koppolu Uma Mahendra Kumar; P. Sathyanarayanan; V. Velmurugan; Chun Hu Cheng; D. Kannadassan

doi:10.1109/TED.2019.2895042

Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun Hu Cheng^*, D. Kannadassan

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I _ON /I _OFF ratio of ∼10 ⁷ and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ _FE ) of 2.13cm ² V ^-1 s- ¹ .

Original language	English
Article number	8636528
Pages (from-to)	1314-1321
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	3
DOIs	https://doi.org/10.1109/TED.2019.2895042
Publication status	Published - 2019 Mar

Keywords

Density of states (DOS)
Plasma fluorination
Thin-film transistors (TFTs)
Tin monoxide (SnO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2019.2895042

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title = "Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation",

abstract = " With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .",

keywords = "Density of states (DOS), Plasma fluorination, Thin-film transistors (TFTs), Tin monoxide (SnO)",

author = "Kadiyam Rajshekar and Hsu, {Hsiao Hsuan} and Kumar, {Koppolu Uma Mahendra} and P. Sathyanarayanan and V. Velmurugan and Cheng, {Chun Hu} and D. Kannadassan",

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doi = "10.1109/TED.2019.2895042",

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AU - Rajshekar, Kadiyam

AU - Hsu, Hsiao Hsuan

AU - Kumar, Koppolu Uma Mahendra

AU - Sathyanarayanan, P.

AU - Velmurugan, V.

AU - Cheng, Chun Hu

AU - Kannadassan, D.

PY - 2019/3

Y1 - 2019/3

N2 - With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .

AB - With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .

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Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

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Keywords

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