Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation

Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun Hu Cheng, D. Kannadassan

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/Hf02 interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high I ON /I OFF ratio of ∼10 7 and low substhreshold swing of ∼100 mV/dec and field-effect mobility (μ FE ) of 2.13cm 2 V -1 s- 1 .

Original languageEnglish
Article number8636528
Pages (from-to)1314-1321
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume66
Issue number3
DOIs
Publication statusPublished - 2019 Mar

Keywords

  • Density of states (DOS)
  • Plasma fluorination
  • Thin-film transistors (TFTs)
  • Tin monoxide (SnO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Rajshekar, K., Hsu, H. H., Kumar, K. U. M., Sathyanarayanan, P., Velmurugan, V., Cheng, C. H., & Kannadassan, D. (2019). Effect of plasma fluorination in p-type SnO TFTs: Experiments, modeling, and simulation. IEEE Transactions on Electron Devices, 66(3), 1314-1321. [8636528]. https://doi.org/10.1109/TED.2019.2895042