Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

Ming Daou Lee; Chia Hua Ho; Chi Kuen Lo; Tai Yen Peng; Yeong Der Yao

doi:10.1109/TMAG.2006.888525

Effect of oxygen concentration on characteristics of NiO_X-based resistance random access memory

Ming Daou Lee^*, Chia Hua Ho, Chi Kuen Lo, Tai Yen Peng, Yeong Der Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

Original language	English
Pages (from-to)	939-943
Number of pages	5
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2006.888525
Publication status	Published - 2007 Feb
Externally published	Yes

Keywords

NiO
Resistance random access memory (RRAM)
Schottky emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2006.888525

Cite this

@article{0192e6dec3a54acfaa3b214b8be34b45,

title = "Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory",

abstract = "The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.",

keywords = "NiO, Resistance random access memory (RRAM), Schottky emission",

author = "Lee, {Ming Daou} and Ho, {Chia Hua} and Lo, {Chi Kuen} and Peng, {Tai Yen} and Yao, {Yeong Der}",

note = "Funding Information: The authors are grateful for the financial support from the nano-research project of Academia Sinica, National Science Council of Taiwan, under Grant No. 95-2112-M-001-059, and the Macronix International Company, Hsinchu, Taiwan, R.O.C.",

year = "2007",

month = feb,

doi = "10.1109/TMAG.2006.888525",

language = "English",

volume = "43",

pages = "939--943",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

AU - Lee, Ming Daou

AU - Ho, Chia Hua

AU - Lo, Chi Kuen

AU - Peng, Tai Yen

AU - Yao, Yeong Der

N1 - Funding Information: The authors are grateful for the financial support from the nano-research project of Academia Sinica, National Science Council of Taiwan, under Grant No. 95-2112-M-001-059, and the Macronix International Company, Hsinchu, Taiwan, R.O.C.

PY - 2007/2

Y1 - 2007/2

N2 - The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

AB - The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

KW - NiO

KW - Resistance random access memory (RRAM)

KW - Schottky emission

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