Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

Ming Daou Lee, Chia Hua Ho, Chi-Kuen Lo, Tai Yen Peng, Yeong Der Yao

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

Original languageEnglish
Pages (from-to)939-943
Number of pages5
JournalIEEE Transactions on Magnetics
Volume43
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

Fingerprint

Nickel oxide
random access memory
Oxygen
Data storage equipment
nickel oxides
oxygen
Bias voltage
Oxide films
Durability
Permittivity
endurance
oxide films
permittivity
Temperature
cycles
nickel monoxide
electric potential
room temperature

Keywords

  • NiO
  • Resistance random access memory (RRAM)
  • Schottky emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory. / Lee, Ming Daou; Ho, Chia Hua; Lo, Chi-Kuen; Peng, Tai Yen; Yao, Yeong Der.

In: IEEE Transactions on Magnetics, Vol. 43, No. 2, 01.02.2007, p. 939-943.

Research output: Contribution to journalArticle

Lee, Ming Daou ; Ho, Chia Hua ; Lo, Chi-Kuen ; Peng, Tai Yen ; Yao, Yeong Der. / Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory. In: IEEE Transactions on Magnetics. 2007 ; Vol. 43, No. 2. pp. 939-943.
@article{1749b9b922a844019bbbb4a4caa289a0,
title = "Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory",
abstract = "The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.",
keywords = "NiO, Resistance random access memory (RRAM), Schottky emission",
author = "Lee, {Ming Daou} and Ho, {Chia Hua} and Chi-Kuen Lo and Peng, {Tai Yen} and Yao, {Yeong Der}",
year = "2007",
month = "2",
day = "1",
doi = "10.1109/TMAG.2006.888525",
language = "English",
volume = "43",
pages = "939--943",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

AU - Lee, Ming Daou

AU - Ho, Chia Hua

AU - Lo, Chi-Kuen

AU - Peng, Tai Yen

AU - Yao, Yeong Der

PY - 2007/2/1

Y1 - 2007/2/1

N2 - The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

AB - The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

KW - NiO

KW - Resistance random access memory (RRAM)

KW - Schottky emission

UR - http://www.scopus.com/inward/record.url?scp=33846697963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846697963&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2006.888525

DO - 10.1109/TMAG.2006.888525

M3 - Article

AN - SCOPUS:33846697963

VL - 43

SP - 939

EP - 943

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 2

ER -