Effect of oxygen concentration on characteristics of NiOX-based resistance random access memory

Ming Daou Lee, Chia Hua Ho, Chi Kuen Lo, Tai Yen Peng, Yeong Der Yao

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The resistance Instability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.

Original languageEnglish
Pages (from-to)939-943
Number of pages5
JournalIEEE Transactions on Magnetics
Volume43
Issue number2
DOIs
Publication statusPublished - 2007 Feb 1

Keywords

  • NiO
  • Resistance random access memory (RRAM)
  • Schottky emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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