@inproceedings{bd8f72b024bb404a858493eaf0641e9b,
title = "Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices",
abstract = "A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.",
keywords = "PBTI lifetime, pMOS, threshold voltage shift",
author = "Piyas Samanta and Huang, {Heng Sheng} and Chen, {Shuang Yuan} and Liu, {Chuan Hsi}",
year = "2014",
month = mar,
day = "13",
doi = "10.1109/EDSSC.2014.7061072",
language = "English",
series = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",
note = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 ; Conference date: 18-06-2014 Through 20-06-2014",
}