Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices

Piyas Samanta, Heng Sheng Huang, Shuang Yuan Chen, Chuan-Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479923342
DOIs
Publication statusPublished - 2014 Mar 13
Event2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
Duration: 2014 Jun 182014 Jun 20

Other

Other2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
CountryChina
CityChengdu
Period14/6/1814/6/20

Fingerprint

Hafnium
Nitridation
Gate dielectrics
Silicates
Degradation
Oxides
Surface states
Temperature
Capacitors
Electric potential

Keywords

  • PBTI lifetime
  • pMOS
  • threshold voltage shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Samanta, P., Huang, H. S., Chen, S. Y., & Liu, C-H. (2014). Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 [7061072] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061072

Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. / Samanta, Piyas; Huang, Heng Sheng; Chen, Shuang Yuan; Liu, Chuan-Hsi.

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061072.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Samanta, P, Huang, HS, Chen, SY & Liu, C-H 2014, Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061072, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, China, 14/6/18. https://doi.org/10.1109/EDSSC.2014.7061072
Samanta P, Huang HS, Chen SY, Liu C-H. Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7061072 https://doi.org/10.1109/EDSSC.2014.7061072
Samanta, Piyas ; Huang, Heng Sheng ; Chen, Shuang Yuan ; Liu, Chuan-Hsi. / Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014.
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