Abstract
A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479923342 |
| DOIs | |
| Publication status | Published - 2014 Mar 13 |
| Event | 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China Duration: 2014 Jun 18 → 2014 Jun 20 |
Other
| Other | 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 |
|---|---|
| Country | China |
| City | Chengdu |
| Period | 14/6/18 → 14/6/20 |
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Keywords
- PBTI lifetime
- pMOS
- threshold voltage shift
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
Cite this
Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices. / Samanta, Piyas; Huang, Heng Sheng; Chen, Shuang Yuan; Liu, Chuan-Hsi.
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061072.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of nitridation of hafnium silicate gate dielectric on positive bias temperature instability in pMOS devices
AU - Samanta, Piyas
AU - Huang, Heng Sheng
AU - Chen, Shuang Yuan
AU - Liu, Chuan-Hsi
PY - 2014/3/13
Y1 - 2014/3/13
N2 - A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.
AB - A detailed investigation of the effect of nitridation of hafnium silicate on positive bias temperature instability (PBTI) in n+-polySi gate pMOS capacitor structures has been presented. Our analysis shows that nitridation improves the intrinsic oxide breakdown field, reduces the equivalent oxide thickness (EOT) and as-grown surface state density Dit by an order of magnitude. On the other hand, like NBTI degradation, nitridation significantly enhances PBTI degradation in pMOS devices causing reduction in PBTI lifetime at a given applied voltage VG. However, both nitrided and non-nitrided gate stacks reaches 10 year lifetime at an applied gate bias of 1.2 V.
KW - PBTI lifetime
KW - pMOS
KW - threshold voltage shift
UR - http://www.scopus.com/inward/record.url?scp=84983157306&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84983157306&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2014.7061072
DO - 10.1109/EDSSC.2014.7061072
M3 - Conference contribution
AN - SCOPUS:84983157306
BT - 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -