Effect of focused ion beam deposition induced contamination on the transport properties of nano devices

Yann Wen Lan, Wen Hao Chang, Yuan Chih Chang, Chia Seng Chang, Chii Dong Chen

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Focused ion beam (FIB) deposition produces unwanted particle contamination beyond the deposition point. This is due to the FIB having a Gaussian distribution. This work investigates the spatial extent of this contamination and its influence on the electrical properties of nano-electronic devices. A correlation study is performed on carbon-nanotube (CNT) devices manufactured using FIB deposition. The devices are observed using transmission electron microscopy (TEM) and these images are correlated with device electrical characteristics. To discover how far Pt-nanoparticle contamination occurs along a CNT after FIB electrical contact deposition careful TEM inspections are performed. The results show FIB deposition efficiently improves electrical contact; however, the practice is accompanied by serious particle contamination near deposition points. These contaminants include metal particles and amorphous elements originating from precursor gases and residual water molecules in the vacuum chamber. Pt-contamination extends for approximately 2 μm from the point of FIB contact deposition. These contaminants cause current fluctuations and alter the transport characteristics of devices. It is recommended that nano-device fabrication occurs at a distance greater than 2 μm from the FIB deposition of an electrical contact.

Original languageEnglish
Article number055705
JournalNanotechnology
Volume26
Issue number5
DOIs
Publication statusPublished - 2015 Jun 6
Externally publishedYes

Keywords

  • Contaminations
  • Electrical contact
  • Focused ion beam
  • Metal diffusion
  • TEM

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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