Effect of contact-etch-stop-layer and Si_1-xGe_x channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays

INIS

• devices 100%
• layers 100%
• transistors 100%
• mechanical properties 100%
• width 75%
• performance 50%
• silicon 50%
• simulation 25%
• gain 25%
• size 25%
• engineering 25%
• diffusion 25%
• mobility 25%
• nanostructures 25%
• strains 25%
• oxides 25%
• alloys 25%
• metals 25%
• semiconductor materials 25%
• field effect transistors 25%
• pitches 25%
• pressure range giga pa 25%

Engineering

• Gate Width 100%
• Nodes 50%
• Active Region 50%
• Channel Region 50%
• Tensiles 50%
• Engineering Strain 50%
• Shallow Trench Isolation 50%
• Narrow Channel 50%
• Piezoresistance Effect 50%
• Channel Device 50%
• Stress Component 50%
• Silicon Technology 50%
• Nanoscale 50%
• Metal-Oxide-Semiconductor Field Effect Transistor (Mosfets) 50%

Material Science

• Nanoscale Device 25%