Effect of capping layer on the ferroelectricity of hafnium oxide

Jui Hsuan Chang; Chen Gui Zheng; Hsuan Han Chen; Pei Tien Chen; Cun Bo Liu; Kai Yang Huang; Hsiao Hsuan Hsu; Chun Hu Cheng; Wu Ching Chou; Su Ting Han

doi:10.1016/j.tsf.2022.139274

Effect of capping layer on the ferroelectricity of hafnium oxide

Jui Hsuan Chang, Chen Gui Zheng, Hsuan Han Chen, Pei Tien Chen, Cun Bo Liu, Kai Yang Huang, Hsiao Hsuan Hsu^*, Chun Hu Cheng, Wu Ching Chou, Su Ting Han

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, we investigate the effect of a capping layer of aluminum oxide (AlO_x) on dopant-free hafnium-oxide (HfO₂) ferroelectric layer. According to our experimental results, the AlO_x-capped HfO₂ ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO₂ ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlO_x capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlO_x capping layer and well-controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.

Original language	English
Article number	139274
Journal	Thin Solid Films
Volume	753
DOIs	https://doi.org/10.1016/j.tsf.2022.139274
Publication status	Published - 2022 Jul 1

Keywords

Aluminum Oxide
Capping Layer
Ferroelectric Polarization
Hafnium Oxide
Power Consumption

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{9479fd4e1fa14ff78e4d12ac04ce2692,

title = "Effect of capping layer on the ferroelectricity of hafnium oxide",

abstract = "In this work, we investigate the effect of a capping layer of aluminum oxide (AlOx) on dopant-free hafnium-oxide (HfO2) ferroelectric layer. According to our experimental results, the AlOx-capped HfO2 ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO2 ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlOx capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlOx capping layer and well-controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.",

keywords = "Aluminum Oxide, Capping Layer, Ferroelectric Polarization, Hafnium Oxide, Power Consumption",

author = "Chang, {Jui Hsuan} and Zheng, {Chen Gui} and Chen, {Hsuan Han} and Chen, {Pei Tien} and Liu, {Cun Bo} and Huang, {Kai Yang} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu} and Chou, {Wu Ching} and Han, {Su Ting}",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = jul,

day = "1",

doi = "10.1016/j.tsf.2022.139274",

language = "English",

volume = "753",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - Effect of capping layer on the ferroelectricity of hafnium oxide

AU - Chang, Jui Hsuan

AU - Zheng, Chen Gui

AU - Chen, Hsuan Han

AU - Chen, Pei Tien

AU - Liu, Cun Bo

AU - Huang, Kai Yang

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun Hu

AU - Chou, Wu Ching

AU - Han, Su Ting

PY - 2022/7/1

Y1 - 2022/7/1

N2 - In this work, we investigate the effect of a capping layer of aluminum oxide (AlOx) on dopant-free hafnium-oxide (HfO2) ferroelectric layer. According to our experimental results, the AlOx-capped HfO2 ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO2 ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlOx capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlOx capping layer and well-controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.

AB - In this work, we investigate the effect of a capping layer of aluminum oxide (AlOx) on dopant-free hafnium-oxide (HfO2) ferroelectric layer. According to our experimental results, the AlOx-capped HfO2 ferroelectric capacitor exhibits the significant improvement on ferroelectric polarization strength and also presents a comparable electrical stress resistance in comparison with control HfO2 ferroelectric capacitor with a very weak ferroelectric hysteresis. An additional nitrogen treatment on AlOx capping layer effectively alleviate the stress-induced generation of defect traps near the interface of tantalum nitride (TaN) electrode under negative-bias voltage stress. Therefore, the performance improvement can be ascribed to the introduction of AlOx capping layer and well-controlled nitrogen plasma treatment to improve interface traps and stabilize the ferroelectric phase transformation during high-temperature annealing process.

KW - Aluminum Oxide

KW - Capping Layer

KW - Ferroelectric Polarization

KW - Hafnium Oxide

KW - Power Consumption

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U2 - 10.1016/j.tsf.2022.139274

DO - 10.1016/j.tsf.2022.139274

M3 - Article

AN - SCOPUS:85129267045

SN - 0040-6090

VL - 753

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 139274

ER -

Effect of capping layer on the ferroelectricity of hafnium oxide

Abstract

Keywords

ASJC Scopus subject areas

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