Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs

Hsien Chin Chiu, Min Li Chou, Chun Hu Cheng, Hsuan Ling Kao, Cheng Lin Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study investigated the effects of temperature and body bias on drain current flicker noise (1/f) in 40-nm nMOSFETs. The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design.

Original languageEnglish
Pages (from-to)267-271
Number of pages5
JournalMicroelectronics Reliability
Volume78
DOIs
Publication statusPublished - 2017 Nov 1

Fingerprint

low frequencies
Drain current
Electric potential
Fermi level
Capacitance
Fabrication
Temperature
inversions
temperature
Networks (circuits)
depletion
flicker
low voltage
high voltages
capacitance
traps
fabrication

Keywords

  • Body effect
  • Flicker noise
  • nMOSFETs
  • Temperature effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. / Chiu, Hsien Chin; Chou, Min Li; Cheng, Chun Hu; Kao, Hsuan Ling; Cho, Cheng Lin.

In: Microelectronics Reliability, Vol. 78, 01.11.2017, p. 267-271.

Research output: Contribution to journalArticle

Chiu, Hsien Chin ; Chou, Min Li ; Cheng, Chun Hu ; Kao, Hsuan Ling ; Cho, Cheng Lin. / Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. In: Microelectronics Reliability. 2017 ; Vol. 78. pp. 267-271.
@article{db0383a308f747ce8fc39b2bac7e3185,
title = "Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs",
abstract = "This study investigated the effects of temperature and body bias on drain current flicker noise (1/f) in 40-nm nMOSFETs. The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design.",
keywords = "Body effect, Flicker noise, nMOSFETs, Temperature effect",
author = "Chiu, {Hsien Chin} and Chou, {Min Li} and Cheng, {Chun Hu} and Kao, {Hsuan Ling} and Cho, {Cheng Lin}",
year = "2017",
month = "11",
day = "1",
doi = "10.1016/j.microrel.2017.09.002",
language = "English",
volume = "78",
pages = "267--271",
journal = "Microelectronics and Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs

AU - Chiu, Hsien Chin

AU - Chou, Min Li

AU - Cheng, Chun Hu

AU - Kao, Hsuan Ling

AU - Cho, Cheng Lin

PY - 2017/11/1

Y1 - 2017/11/1

N2 - This study investigated the effects of temperature and body bias on drain current flicker noise (1/f) in 40-nm nMOSFETs. The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design.

AB - This study investigated the effects of temperature and body bias on drain current flicker noise (1/f) in 40-nm nMOSFETs. The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation. At 300 K, as the depletion width was decreased, 1/f noise decreased with the body bias from − 0.5 to + 0.5 V in the weak inversion; conversely, 1/f noise was independent of the body bias because of the neglected depletion charge capacitance in the strong inversion. When the temperature was below 150 K, 1/f noise increased when the drain voltage was low because of the Fermi level toward the band edge, which has a higher trap density and corresponds to the inverse square of the subthreshold swing. However, when the drain voltage was high, 1/f noise was dominated by the mobility fluctuation because a wider strong inversion region at 150 K resulted in a lower 1/f noise and insignificant body effect. The analysis of this behavior in 40-nm devices may assist in determining the optimal device fabrication methods and circuit design.

KW - Body effect

KW - Flicker noise

KW - nMOSFETs

KW - Temperature effect

UR - http://www.scopus.com/inward/record.url?scp=85032185471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032185471&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2017.09.002

DO - 10.1016/j.microrel.2017.09.002

M3 - Article

VL - 78

SP - 267

EP - 271

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

ER -